Tanay Gosavi
Tanay Gosavi
Kepler | Intel | Cornell
Verified email at - Homepage
Cited by
Cited by
Scalable energy-efficient magnetoelectric spin–orbit logic
S Manipatruni, DE Nikonov, CC Lin, TA Gosavi, H Liu, B Prasad, ...
Nature 565 (7737), 35-42, 2019
Mechanical spin control of nitrogen-vacancy centers in diamond
ER MacQuarrie, TA Gosavi, NR Jungwirth, SA Bhave, GD Fuchs
Physical review letters 111 (22), 227602, 2013
Coherent control of a nitrogen-vacancy center spin ensemble with a diamond mechanical resonator
ER MacQuarrie, TA Gosavi, AM Moehle, NR Jungwirth, SA Bhave, ...
Optica 2 (3), 233-238, 2015
Continuous dynamical decoupling of a single diamond nitrogen-vacancy center spin with a mechanical resonator
ER MacQuarrie, TA Gosavi, SA Bhave, GD Fuchs
Physical Review B 92 (22), 224419, 2015
Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures
VT Pham, I Groen, S Manipatruni, WY Choi, DE Nikonov, E Sagasta, ...
Nature Electronics, 1-7, 2020
Ultralow voltage manipulation of ferromagnetism
B Prasad, YL Huang, RV Chopdekar, Z Chen, J Steffes, S Das, Q Li, ...
Advanced materials 32 (28), 2001943, 2020
Manipulating magnetoelectric energy landscape in multiferroics
YL Huang, D Nikonov, C Addiego, RV Chopdekar, B Prasad, L Zhang, ...
Nature communications 11 (1), 2836, 2020
Tunable charge to spin conversion in strontium iridate thin films
AS Everhardt, M Dc, X Huang, S Sayed, TA Gosavi, Y Tang, CC Lin, ...
Physical Review Materials 3 (5), 051201, 2019
Novel Spin–Orbit Torque Generation at Room Temperature in an All‐Oxide Epitaxial La0.7Sr0.3MnO3/SrIrO3 System
X Huang, S Sayed, J Mittelstaedt, S Susarla, S Karimeddiny, L Caretta, ...
Advanced Materials 33 (24), 2008269, 2021
Toward Intrinsic Ferroelectric Switching in Multiferroic
E Parsonnet, YL Huang, T Gosavi, A Qualls, D Nikonov, CC Lin, I Young, ...
Physical review letters 125 (6), 067601, 2020
Advancing Monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling
C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ...
IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021
Enabling ultra-low-voltage switching in BaTiO3
Y Jiang, E Parsonnet, A Qualls, W Zhao, S Susarla, D Pesquera, ...
Nature materials 21 (7), 779-785, 2022
Stacked ferroelectric non-planar capacitors in a memory bit-cell
RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A Mathuriya, ...
US Patent 11,423,967, 2022
CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist
N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication
K Oguz, T Gosavi, S Manipatruni, C Kuo, M Doczy, K O'brien
US Patent 11,257,613, 2022
Metal/ two-dimensional electron gases for spin-to-charge conversion
LM Vicente-Arche, S Mallik, M Cosset-Cheneau, P NoŽl, DC Vaz, F Trier, ...
Physical Review Materials 5 (6), 064005, 2021
High blocking temperature spin orbit torque electrode
T Gosavi, S Manipatruni, K Oguz, I Young, K O'brien, G Allen, N Sato
US Patent 11,251,365, 2022
HBAR as a high frequency high stress generator
TA Gosavi, ER MacQuarrie, GD Fuchs, SA Bhave
2015 IEEE International Ultrasonics Symposium (IUS), 1-4, 2015
Dual hydrogen barrier layer for memory devices
N Sato, N Mukherjee, M Manfrini, T Gosavi, RK Dokania, SJ Rathi, ...
US Patent 11,869,928, 2024
Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy
S Manipatruni, K Oguz, CC Lin, C Wiegand, T Gosavi, I Young
US Patent 11,264,558, 2022
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