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Noriyuki Sato
Noriyuki Sato
Verified email at stanford.edu
Title
Cited by
Cited by
Year
Two-terminal spin–orbit torque magnetoresistive random access memory
N Sato, F Xue, RM White, C Bi, SX Wang
Nature Electronics 1 (9), 508-511, 2018
1632018
Domain wall based spin-Hall nano-oscillators
N Sato, K Schultheiss, L Körber, N Puwenberg, T Mühl, AA Awad, ...
Physical review letters 123 (5), 057204, 2019
492019
Experimental and theoretical investigation of the precise transduction mechanism in giant magnetoresistive biosensors
JR Lee, N Sato, DJB Bechstein, SJ Osterfeld, J Wang, AW Gani, DA Hall, ...
Scientific reports 6 (1), 18692, 2016
462016
Skin effect suppression for Cu/CoZrNb multilayered inductor
N Sato, Y Endo, M Yamaguchi
Journal of Applied Physics 111 (7), 2012
312012
Exchange-biased anisotropic magnetoresistive field sensor
Y Guo, Y Ouyang, N Sato, CC Ooi, SX Wang
IEEE Sensors Journal 17 (11), 3309-3315, 2017
292017
Effect of annealing on exchange stiffness of ultrathin CoFeB film with perpendicular magnetic anisotropy
N Sato, RM White, SX Wang
Applied Physics Letters 108 (15), 2016
292016
Stacked ferroelectric non-planar capacitors in a memory bit-cell
RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A Mathuriya, ...
US Patent 11,423,967, 2022
262022
CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist
N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
232020
A Study of Economical Incentives for Voltage Profile Control Method in Future Distribution Network
T Tsuji, N Sato, T Hashiguchi, T Goda, S Tange, T Nomura
IEEJ Transactions on Power and Energy 129 (6), 745-755, 2009
222009
High blocking temperature spin orbit torque electrode
T Gosavi, S Manipatruni, K Oguz, I Young, K O'brien, G Allen, N Sato
US Patent 11,251,365, 2022
182022
Investigation of extrinsic damping caused by magnetic dead layer in Ta-CoFeB-MgO multilayers with perpendicular anisotropy
N Sato, KP O'Brien, K Millard, B Doyle, K Oguz
Journal of Applied Physics 119 (9), 2016
182016
Dual hydrogen barrier layer for memory devices
N Sato, N Mukherjee, M Manfrini, T Gosavi, RK Dokania, SJ Rathi, ...
US Patent 11,869,928, 2024
152024
Large voltage control of magnetic anisotropy in CoFeB/MgO/OX structures at room temperature
F Xue, N Sato, C Bi, J Hu, J He, SX Wang
APL Materials 7 (10), 2019
152019
Time refraction of spin waves
K Schultheiss, N Sato, P Matthies, L Körber, K Wagner, T Hula, O Gladii, ...
Physical review letters 126 (13), 137201, 2021
142021
Electrically Tunable Integrated Thin‐Film Magnetoelectric Resonators
A El‐Ghazaly, JT Evans, N Sato, N Montross, H Ohldag, RM White, ...
Advanced Materials Technologies 2 (8), 1700062, 2017
142017
Effect of Mg oxidation degree on Rashba-effect-induced torques in Ta/CoFeB/Mg (MgO) multilayer
N Sato, A El-Ghazaly, RM White, SX Wang
IEEE Transactions on Magnetics 52 (7), 1-4, 2016
142016
Skin effect suppression in multilayer thin-film spiral inductor taking advantage of negative permeability of magnetic film beyond FMR frequency
M Yamaguchi, N Sato, Y Endo
The 40th European Microwave Conference, 1182-1185, 2010
132010
Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication
K O'brien, N Sato, K Oguz, M Doczy, C Kuo
US Patent 11,227,644, 2022
122022
Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels
RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A Mathuriya, ...
US Patent 11,545,204, 2023
102023
Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory
T Gosavi, S Manipatruni, CC Lin, K Oguz, C Wiegand, A Smith, N Sato, ...
US Patent 11,374,164, 2022
102022
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