| Copper metallization for high performance silicon technology R Rosenberg, DC Edelstein, CK Hu, KP Rodbell Annual review of materials science 30 (1), 229-262, 2000 | 594 | 2000 |
| Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground MS Gordon, P Goldhagen, KP Rodbell, TH Zabel, HHK Tang, JM Clem, ... IEEE Transactions on Nuclear Science 51 (6), 3427-3434, 2004 | 500 | 2004 |
| Mechanisms for microstructure evolution in electroplated copper thin films near room temperature JME Harper, C Cabral Jr, PC Andricacos, L Gignac, IC Noyan, KP Rodbell, ... Journal of applied physics 86 (5), 2516-2525, 1999 | 462 | 1999 |
| Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor JW Carr, LD David, WL Guthrie, FB Kaufman, WJ Patrick, KP Rodbell, ... US Patent 4,954,142, 1990 | 284 | 1990 |
| Microstructure control in semiconductor metallization JME Harper, KP Rodbell Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997 | 228 | 1997 |
| Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells KP Rodbell, DF Heidel, HHK Tang, MS Gordon, P Oldiges, CE Murray IEEE Transactions on Nuclear Science 54 (6), 2474-2479, 2007 | 209 | 2007 |
| Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM DF Heidel, PW Marshall, JA Pellish, KP Rodbell, KA LaBel, JR Schwank, ... IEEE Transactions on Nuclear Science 56 (6), 3499-3504, 2009 | 203 | 2009 |
| Correlation of texture with electromigration behavior in Al metallization DB Knorr, DP Tracy, KP Rodbell Applied physics letters 59 (25), 3241-3243, 1991 | 178 | 1991 |
| Low energy proton single-event-upset test results on 65 nm SOI SRAM DF Heidel, PW Marshall, KA LaBel, JR Schwank, KP Rodbell, MC Hakey, ... IEEE Transactions on nuclear Science 55 (6), 3394-3400, 2008 | 177 | 2008 |
| Electromigration and stress-induced voiding in fine Al and Al-alloy thin-film lines CK Hu, KP Rodbell, TD Sullivan, KY Lee, DP Bouldin IBM Journal of Research and Development 39 (4), 465-497, 1995 | 173 | 1995 |
| Texture in multilayer metallization structures DP Tracy, DB Knorr, KP Rodbell Journal of Applied Physics 76 (5), 2671-2680, 1994 | 153 | 1994 |
| On the use of alloying elements for Cu interconnect applications K Barmak, C Cabral, KP Rodbell, JME Harper Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 140 | 2006 |
| Method for forming electromigration-resistant structures by doping PC Andricacos, C Cabral Jr, CC Parks, KP Rodbell, RYL Tsai US Patent 6,268,291, 2001 | 129 | 2001 |
| Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study A Grill, V Patel, KP Rodbell, E Huang, MR Baklanov, KP Mogilnikov, ... Journal of Applied Physics 94 (5), 3427-3435, 2003 | 128 | 2003 |
| The role of texture in the electromigration behavior of pure aluminum lines DB Knorr, KP Rodbell Journal of applied physics 79 (5), 2409-2417, 1996 | 124 | 1996 |
| Detection of current‐induced vacancies in thin aluminum–copper lines using positrons P Asoka‐Kumar, K O’brien, KG Lynn, PJ Simpson, KP Rodbell Applied physics letters 68 (3), 406-408, 1996 | 113 | 1996 |
| Grooved polishing pads and methods of use ST Chen, KM Davis, KP Rodbell US Patent 6,685,548, 2004 | 105 | 2004 |
| Method for forming a porous dielectric material layer in a semiconductor device and device formed TJ Dalton, SE Greco, JC Hedrick, SV Nitta, S Purushothaman, KP Rodbell, ... US Patent 6,451,712, 2002 | 99 | 2002 |
| Multilayered intermetallic connection for semiconductor devices KP Rodbell, PA Totta, JF White US Patent 5,071,714, 1991 | 86 | 1991 |
| Positron annihilation techniques suited for porosity characterization of thin films MP Petkov, CL Wang, MH Weber, KG Lynn, KP Rodbell The Journal of Physical Chemistry B 107 (12), 2725-2734, 2003 | 83 | 2003 |
Conal MurrayResearch Staff Member, IBM T.J. Watson Research CenterVerified email at us.ibm.com
