Kenneth P Rodbell
Kenneth P Rodbell
IBM TJ Watson Research Center
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Cited by
Cited by
Copper metallization for high performance silicon technology
R Rosenberg, DC Edelstein, CK Hu, KP Rodbell
Annual review of materials science 30 (1), 229-262, 2000
Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground
MS Gordon, P Goldhagen, KP Rodbell, TH Zabel, HHK Tang, JM Clem, ...
IEEE Transactions on Nuclear Science 51 (6), 3427-3434, 2004
Mechanisms for microstructure evolution in electroplated copper thin films near room temperature
JME Harper, C Cabral Jr, PC Andricacos, L Gignac, IC Noyan, KP Rodbell, ...
Journal of applied physics 86 (5), 2516-2525, 1999
Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JW Carr, LD David, WL Guthrie, FB Kaufman, WJ Patrick, KP Rodbell, ...
US Patent 4,954,142, 1990
Microstructure control in semiconductor metallization
JME Harper, KP Rodbell
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997
Low-energy proton-induced single-event-upsets in 65 nm node, silicon-on-insulator, latches and memory cells
KP Rodbell, DF Heidel, HHK Tang, MS Gordon, P Oldiges, CE Murray
IEEE Transactions on Nuclear Science 54 (6), 2474-2479, 2007
Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM
DF Heidel, PW Marshall, JA Pellish, KP Rodbell, KA LaBel, JR Schwank, ...
IEEE Transactions on Nuclear Science 56 (6), 3499-3504, 2009
Correlation of texture with electromigration behavior in Al metallization
DB Knorr, DP Tracy, KP Rodbell
Applied physics letters 59 (25), 3241-3243, 1991
Electromigration and stress-induced voiding in fine Al and Al-alloy thin-film lines
CK Hu, KP Rodbell, TD Sullivan, KY Lee, DP Bouldin
IBM Journal of Research and Development 39 (4), 465-497, 1995
Low energy proton single-event-upset test results on 65 nm SOI SRAM
DF Heidel, PW Marshall, KA LaBel, JR Schwank, KP Rodbell, MC Hakey, ...
IEEE Transactions on nuclear Science 55 (6), 3394-3400, 2008
Texture in multilayer metallization structures
DP Tracy, DB Knorr, KP Rodbell
Journal of Applied Physics 76 (5), 2671-2680, 1994
On the use of alloying elements for Cu interconnect applications
K Barmak, C Cabral, KP Rodbell, JME Harper
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
Method for forming electromigration-resistant structures by doping
PC Andricacos, C Cabral Jr, CC Parks, KP Rodbell, RYL Tsai
US Patent 6,268,291, 2001
Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study
A Grill, V Patel, KP Rodbell, E Huang, MR Baklanov, KP Mogilnikov, ...
Journal of Applied Physics 94 (5), 3427-3435, 2003
The role of texture in the electromigration behavior of pure aluminum lines
DB Knorr, KP Rodbell
Journal of applied physics 79 (5), 2409-2417, 1996
Detection of current‐induced vacancies in thin aluminum–copper lines using positrons
P Asoka‐Kumar, K O’brien, KG Lynn, PJ Simpson, KP Rodbell
Applied physics letters 68 (3), 406-408, 1996
Grooved polishing pads and methods of use
ST Chen, KM Davis, KP Rodbell
US Patent 6,685,548, 2004
Method for forming a porous dielectric material layer in a semiconductor device and device formed
TJ Dalton, SE Greco, JC Hedrick, SV Nitta, S Purushothaman, KP Rodbell, ...
US Patent 6,451,712, 2002
Multilayered intermetallic connection for semiconductor devices
KP Rodbell, PA Totta, JF White
US Patent 5,071,714, 1991
Porosity characterization by beam-based three-photon positron annihilation spectroscopy
MP Petkov, MH Weber, KG Lynn, KP Rodbell
Applied Physics Letters 79 (23), 3884-3886, 2001
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