Sabina Spiga
Sabina Spiga
CNR-IMM, Unit of Agrate Brianza
Overená e-mailová adresa na:
Citované v
Citované v
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM
U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ...
2007 IEEE International Electron Devices Meeting, 775-778, 2007
Analog memristive synapse in spiking networks implementing unsupervised learning
E Covi, S Brivio, A Serb, T Prodromakis, M Fanciulli, S Spiga
Frontiers in neuroscience 10, 208311, 2016
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters
Solid-State Electronics 58 (1), 42-47, 2011
Atomic-layer deposition of Lu2O3
G Scarel, E Bonera, C Wiemer, G Tallarida, S Spiga, M Fanciulli, ...
Applied Physics Letters 85 (4), 630-632, 2004
Interface engineering for Ge metal-oxide–semiconductor devices
A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515 (16), 6337-6343, 2007
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ...
Journal of Electroceramics 39, 21-38, 2017
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices
S Brivio, J Frascaroli, S Spiga
Applied Physics Letters 107 (2), 2015
HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
M Caymax, S Van Elshocht, M Houssa, A Delabie, T Conard, M Meuris, ...
Materials Science and Engineering: B 135 (3), 256-260, 2006
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
D Ielmini, S Spiga, F Nardi, C Cagli, A Lamperti, E Cianci, M Fanciulli
Journal of Applied Physics 109 (3), 2011
Formation and disruption of conductive filaments in a HfO2/TiN structure
S Brivio, G Tallarida, E Cianci, S Spiga
Nanotechnology 25 (38), 385705, 2014
Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly
J Frascaroli, S Brivio, F Ferrarese Lupi, G Seguini, L Boarino, M Perego, ...
ACS nano 9 (3), 2518-2529, 2015
Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition
S Spiga, A Lamperti, C Wiemer, M Perego, E Cianci, G Tallarida, HL Lu, ...
Microelectronic Engineering 85 (12), 2414-2419, 2008
Vibrational and electrical properties of hexagonal La2O3 films
G Scarel, A Debernardi, D Tsoutsou, S Spiga, SC Capelli, L Lamagna, ...
Applied Physics Letters 91 (10), 2007
Synaptic potentiation and depression in Al: HfO2-based memristor
E Covi, S Brivio, M Fanciulli, S Spiga
Microelectronic Engineering 147, 41-44, 2015
Atomic layer deposition of NiO films on Si (100) using cyclopentadienyl-type compounds and ozone as precursors
HL Lu, G Scarel, C Wiemer, M Perego, S Spiga, M Fanciulli, G Pavia
Journal of The Electrochemical Society 155 (10), H807, 2008
Energy-band diagram of metal//silicon structures
G Seguini, E Bonera, S Spiga, G Scarel, M Fanciulli
Applied physics letters 85 (22), 5316-5318, 2004
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing
J Frascaroli, S Brivio, E Covi, S Spiga
Scientific reports 8 (1), 7178, 2018
Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy
S Kremmer, H Wurmbauer, C Teichert, G Tallarida, S Spiga, C Wiemer, ...
Journal of applied physics 97 (7), 2005
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–20