| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 374 | 2020 |
| Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures J Bai, T Wang, S Sakai Journal of Applied physics 88 (8), 4729-4733, 2000 | 177 | 2000 |
| A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE S Sakai, T Wang, Y Morishima, Y Naoi Journal of crystal growth 221 (1-4), 334-337, 2000 | 170 | 2000 |
| Role of dislocation in InGaN phase separation T Sugahara, M Hao, T Wang, D Nakagawa, Y Naoi, K Nishino, S Sakai Japanese journal of applied physics 37 (10B), L1195, 1998 | 150 | 1998 |
| Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes T Wang, J Bai, S Sakai, JK Ho Applied Physics Letters 78 (18), 2617-2619, 2001 | 146 | 2001 |
| 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate T Wang, YH Liu, YB Lee, JP Ao, J Bai, S Sakai Applied Physics Letters 81 (14), 2508-2510, 2002 | 145 | 2002 |
| Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells T Wang, D Nakagawa, J Wang, T Sugahara, S Sakai Applied physics letters 73 (24), 3571-3573, 1998 | 143 | 1998 |
| Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission T Wang Semiconductor Science and Technology 31 (9), 093003, 2016 | 129 | 2016 |
| Luminescence of nanometer‐sized amorphous silicon nitride solids C Mo, L Zhang, C Xie, T Wang Journal of applied physics 73 (10), 5185-5188, 1993 | 127 | 1993 |
| Valence band offset of InN∕ AlN heterojunctions measured by x-ray photoelectron spectroscopy PDC King, TD Veal, PH Jefferson, CF McConville, T Wang, PJ Parbrook, ... Applied physics letters 90 (13), 2007 | 117 | 2007 |
| Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods Q Wang, J Bai, YP Gong, T Wang Journal of Physics D: Applied Physics 44 (39), 395102, 2011 | 103 | 2011 |
| A study of dislocations in AlN and GaN films grown on sapphire substrates J Bai, T Wang, PJ Parbrook, KB Lee, AG Cullis Journal of Crystal Growth 282 (3-4), 290-296, 2005 | 103 | 2005 |
| Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells JP O’Neill, IM Ross, AG Cullis, T Wang, PJ Parbrook Applied Physics Letters 83 (10), 1965-1967, 2003 | 101 | 2003 |
| Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes T Wang, YH Liu, YB Lee, Y Izumi, JP Ao, J Bai, HD Li, S Sakai Journal of crystal growth 235 (1-4), 177-182, 2002 | 95 | 2002 |
| High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures J Bruckbauer, PR Edwards, T Wang, RW Martin Applied Physics Letters 98 (14), 2011 | 91 | 2011 |
| Characterization of InGaN-based nanorod light emitting diodes with different indium compositions J Bai, Q Wang, T Wang Journal of Applied Physics 111 (11), 2012 | 90 | 2012 |
| Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition T Wang, T Shirahama, HB Sun, HX Wang, J Bai, S Sakai, H Misawa Applied Physics Letters 76 (16), 2220-2222, 2000 | 88 | 2000 |
| Electron mobility exceeding in an AlGaN–GaN heterostructure grown on a sapphire substrate T Wang, Y Ohno, M Lachab, D Nakagawa, T Shirahama, S Sakai, H Ohno Applied physics letters 74 (23), 3531-3533, 1999 | 88 | 1999 |
| Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures T Wang, H Saeki, J Bai, T Shirahama, M Lachab, S Sakai, P Eliseev Applied Physics Letters 76 (13), 1737-1739, 2000 | 86 | 2000 |
| V-shaped defects in InGaN/GaN multiquantum wells S Mahanty, M Hao, T Sugahara, RSQ Fareed, Y Morishima, Y Naoi, ... Materials Letters 41 (2), 67-71, 1999 | 78 | 1999 |
