| Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum Z Sun, D Ding, Q Gong, W Zhou, B Xu, ZG Wang Optical and quantum Electronics 31, 1235-1246, 1999 | 113 | 1999 |
| Thermal redistribution of photocarriers between bimodal quantum dots YC Zhang, CJ Huang, FQ Liu, B Xu, J Wu, YH Chen, D Ding, WH Jiang, ... Journal of Applied Physics 90 (4), 1973-1976, 2001 | 83 | 2001 |
| A semi-analytical model for semiconductor solar cells D Ding, SR Johnson, SQ Yu, SN Wu, YH Zhang Journal of Applied Physics 110 (12), 2011 | 70 | 2011 |
| Band edge alignment of pseudomorphic on GaAs JB Wang, SR Johnson, SA Chaparro, D Ding, Y Cao, YG Sadofyev, ... Physical Review B—Condensed Matter and Materials Physics 70 (19), 195339, 2004 | 68 | 2004 |
| High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm HY Liu, B Xu, YQ Wei, D Ding, JJ Qian, Q Han, JB Liang, ZG Wang Applied Physics Letters 79 (18), 2868-2870, 2001 | 67 | 2001 |
| GaAsSb/GaAs band alignment evaluation for long-wave photonic applications SR Johnson, CZ Guo, S Chaparro, YG Sadofyev, J Wang, Y Cao, ... Journal of crystal growth 251 (1-4), 521-525, 2003 | 65 | 2003 |
| Combined effects of shunt and luminescence coupling on external quantum efficiency measurements of multijunction solar cells JJ Li, SH Lim, CR Allen, D Ding, YH Zhang IEEE Journal of Photovoltaics 1 (2), 225-230, 2011 | 59 | 2011 |
| Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1− xAs (0⩽ x⩽ 0.3) HY Liu, XD Wang, J Wu, B Xu, YQ Wei, WH Jiang, D Ding, XL Ye, F Lin, ... Journal of Applied Physics 88 (6), 3392, 2000 | 55 | 2000 |
| Anomalous temperature dependence of photoluminescence from InAs quantum dots WH Jiang, XL Ye, B Xu, HZ Xu, D Ding, JB Liang, ZG Wang Journal of Applied Physics 88 (5), 2529-2532, 2000 | 55 | 2000 |
| Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0 0 1) substrates for electronic and optoelectronic device applications J Fan, L Ouyang, X Liu, D Ding, JK Furdyna, DJ Smith, YH Zhang Journal of crystal growth 323 (1), 127-131, 2011 | 54 | 2011 |
| MBE growth of II–VI materials on GaSb substrates for photovoltaic applications S Wang, D Ding, X Liu, XB Zhang, DJ Smith, JK Furdyna, YH Zhang Journal of Crystal Growth 311 (7), 2116-2119, 2009 | 50 | 2009 |
| Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy JB Wang, D Ding, SR Johnson, SQ Yu, YH Zhang physica status solidi (b) 244 (8), 2740-2751, 2007 | 48 | 2007 |
| Influence of photon recycling on semiconductor luminescence refrigeration JB Wang, SR Johnson, D Ding, SQ Yu, YH Zhang Journal of Applied Physics 100 (4), 2006 | 48 | 2006 |
| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots HY Liu, XD Wang, B Xu, D Ding, WH Jiang, J Wu, ZG Wang Journal of Crystal Growth 213 (1-2), 193-197, 2000 | 47 | 2000 |
| Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs SR Johnson, D Ding, JB Wang, SQ Yu, YH Zhang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 45 | 2007 |
| High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers FQ Liu, YZ Zhang, QS Zhang, D Ding, B Xu, ZG Wang, DS Jiang, BQ Sun Semiconductor science and technology 15 (12), L44, 2000 | 39 | 2000 |
| Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs NA Riordan, C Gogineni, SR Johnson, X Lu, T Tiedje, D Ding, YH Zhang, ... Journal of Materials Science: Materials in Electronics 23, 1799-1804, 2012 | 38 | 2012 |
| Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots HY Liu, B Xu, YH Chen, D Ding, ZG Wang Journal of Applied Physics 88 (9), 5433-5436, 2000 | 34 | 2000 |
| Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots YC Zhang, CJ Huang, FQ Liu, B Xu, D Ding, WH Jiang, YF Li, XL Ye, J Wu, ... Journal of crystal growth 219 (3), 199-204, 2000 | 33 | 2000 |
| Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy W Jiang, H Xu, B Xu, W Zhou, Q Gong, D Ding, J Liang, Z Wang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 32 | 2001 |
Yong-Hang ZhangProf., School of Electrical, Computer and Energy EngineeringVerified email at asu.edu
