Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ...
Microelectronic Engineering 88 (4), 342-346, 2011
154 2011 AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon (111) substrates with high electron mobility K Cheng, H Liang, M Van Hove, K Geens, B De Jaeger, P Srivastava, ...
Applied Physics Express 5 (1), 011002, 2011
141 2011 Site selective integration of III–V materials on Si for nanoscale logic and photonic devices M Paladugu, C Merckling, R Loo, O Richard, H Bender, J Dekoster, ...
Crystal Growth & Design 12 (10), 4696-4702, 2012
132 2012 Selective area growth of high quality InP on Si (001) substrates G Wang, MR Leys, R Loo, O Richard, H Bender, N Waldron, G Brammertz, ...
Applied Physics Letters 97 (12), 2010
88 2010 Spin Density Wave Instability for Chromium in Fe Cr(100) Multilayers J Meersschaut, J Dekoster, R Schad, P Beliën, M Rots
Physical review letters 75 (8), 1638, 1995
87 1995 Polytypic InP nanolaser monolithically integrated on (001) silicon Z Wang, B Tian, M Paladugu, M Pantouvaki, N Le Thomas, C Merckling, ...
Nano letters 13 (11), 5063-5069, 2013
83 2013 Concentration-controlled phase selection of silicide formation during reactive deposition A Vantomme, S Degroote, J Dekoster, G Langouche, R Pretorius
Applied physics letters 74 (21), 3137-3139, 1999
77 1999 Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing YC Chang, C Merckling, J Penaud, CY Lu, WE Wang, J Dekoster, ...
Applied physics letters 97 (11), 2010
73 2010 Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate … LK Chu, C Merckling, A Alian, J Dekoster, J Kwo, M Hong, M Caymax, ...
Applied Physics Letters 99 (4), 2011
71 2011 Coarsening of antiferromagnetic domains in multilayers: the key role of magnetocrystalline anisotropy DL Nagy, L Bottyán, B Croonenborghs, L Deák, B Degroote, J Dekoster, ...
Physical review letters 88 (15), 157202, 2002
60 2002 GaSb molecular beam epitaxial growth on p-InP (001) and passivation with in situ deposited Al2O3 gate oxide C Merckling, X Sun, A Alian, G Brammertz, VV Afanas’ev, TY Hoffmann, ...
Journal of Applied Physics 109 (7), 2011
56 2011 Epilayer-induced structural transition to bcc Co during epitaxial growth of Co/Fe superlattices J Dekoster, E Jedryka, C Meny, G Langouche
Europhysics Letters 22 (6), 433, 1993
54 1993 Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ...
2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012
49 2012 Selective area growth of InP in shallow-trench-isolated structures on off-axis Si (001) substrates G Wang, MR Leys, ND Nguyen, R Loo, G Brammertz, O Richard, ...
Journal of the Electrochemical Society 157 (11), H1023, 2010
48 2010 Ge1− xSnx stressors for strained-Ge CMOS S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ...
Solid-State Electronics 60 (1), 53-57, 2011
47 2011 Magnetism and structure in hexagonal Fe/Ru superlattices with short periodicity M Maurer, M Piecuch, MF Ravet, JC Ousset, JP Sanchez, C Aaron, ...
Journal of magnetism and magnetic materials 93, 15-24, 1991
45 1991 New phases and chemical short range order in co-deposited CoFe thin films with bcc structure: an NMR study M Wojcik, JP Jay, P Panissod, E Jedryka, J Dekoster, G Langouche
Zeitschrift für Physik B Condensed Matter 103, 5-12, 1997
43 1997 GeSn channel nMOSFETs: Material potential and technological outlook S Gupta, B Vincent, DHC Lin, M Gunji, A Firrincieli, F Gencarelli, ...
2012 Symposium on VLSI Technology (VLSIT), 95-96, 2012
42 2012 Epitaxial growth of bcc Co/Fe superlattices J Dekoster, E Jedryka, C Meny, G Langouche
Journal of magnetism and magnetic materials 121 (1-3), 69-72, 1993
42 1993 Electronic band structure of compressively strained Ge1− xSnx with x< 0.11 studied by contactless electroreflectance K Zelazna, MP Polak, P Scharoch, J Serafinczuk, M Gladysiewicz, ...
Applied Physics Letters 106 (14), 2015
41 2015