| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016 | 247 | 2016 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 202 | 2017 |
| Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... ACS Photonics 6 (11), 2807-2815, 2019 | 199 | 2019 |
| Electrically injected GeSn lasers on Si operating up to 100 K Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ... Optica 7 (8), 924-928, 2020 | 197 | 2020 |
| Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 5640, 2018 | 146 | 2018 |
| Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ... Acs Photonics 6 (6), 1434-1441, 2019 | 138 | 2019 |
| Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 2014 | 104 | 2014 |
| Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ... Journal of Applied Physics 120 (2), 2016 | 93 | 2016 |
| Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3% W Dou, Y Zhou, J Margetis, SA Ghetmiri, S Al-Kabi, W Du, J Liu, G Sun, ... Optics letters 43 (19), 4558-4561, 2018 | 86 | 2018 |
| All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ... Applied Physics Letters 113 (22), 2018 | 61 | 2018 |
| Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ... Optics Letters 42 (3), 387-390, 2017 | 54 | 2017 |
| Electrically injected GeSn lasers with peak wavelength up to 2.7 μm Y Zhou, S Ojo, CW Wu, Y Miao, H Tran, JM Grant, G Abernathy, S Amoah, ... Photonics Research 10 (1), 222-229, 2021 | 52 | 2021 |
| Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration TD Eales, IP Marko, S Schulz, E O’Halloran, S Ghetmiri, W Du, Y Zhou, ... Scientific reports 9 (1), 14077, 2019 | 52 | 2019 |
| Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure W Du, SA Ghetmiri, J Margetis, S Al-Kabi, Y Zhou, J Liu, G Sun, RA Soref, ... Journal of Applied Physics 122 (12), 2017 | 37 | 2017 |
| Study of Si-based GeSn optically pumped lasers with micro-disk and ridge waveguide structures W Du, QM Thai, J Chrétien, M Bertrand, L Casiez, Y Zhou, J Margetis, ... Frontiers in Physics 7, 147, 2019 | 29 | 2019 |
| Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ... AIP Advances 8 (2), 2018 | 29 | 2018 |
| Si based GeSn light emitter: mid-infrared devices in Si photonics SQ Yu, SA Ghetmiri, W Du, J Margetis, Y Zhou, A Mosleh, S Al-Kabi, ... Silicon Photonics X 9367, 146-153, 2015 | 24 | 2015 |
| Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ... Journal of Electronic Materials 45, 6265-6272, 2016 | 23 | 2016 |
| Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement PC Grant, J Margetis, W Du, Y Zhou, W Dou, G Abernathy, A Kuchuk, B Li, ... Nanotechnology 29 (46), 465201, 2018 | 20 | 2018 |
| Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics G Abernathy, Y Zhou, S Ojo, B Alharthi, PC Grant, W Du, J Margetis, ... Journal of Applied Physics 129 (9), 2021 | 14 | 2021 |
Shui-Qing (Fisher) YuUniversity of ArkansasVerified email at uark.edu
