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Anisur Rahman
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SPECIAL ISSUE PAPERS-Theory of Ballistic Nanotransistors
A Rahman, J Guo, S Datta, MS Lundstrom
IEEE Transactions on Electron Devices 50 (9), 1853-1864, 2003
9782003
Theory of ballistic nanotransistors
A Rahman, J Guo, S Datta, MS Lundstrom
IEEE Transactions on Electron Devices 50 (9), 1853-1864, 2003
9762003
A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate …
C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017
4242017
A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications
CH Jan, U Bhattacharya, R Brain, SJ Choi, G Curello, G Gupta, W Hafez, ...
2012 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2012
3702012
A 32nm SoC platform technology with 2nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product …
CH Jan, M Agostinelli, M Buehler, ZP Chen, SJ Choi, G Curello, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
3502009
A compact scattering model for the nanoscale double-gate MOSFET
A Rahman, MS Lundstrom
IEEE Transactions on Electron Devices 49 (3), 481-489, 2002
2472002
On the validity of the parabolic effective-mass approximation for the IV calculation of silicon nanowire transistors
J Wang, A Rahman, A Ghosh, G Klimeck, M Lundstrom
IEEE Transactions on Electron Devices 52 (7), 1589-1595, 2005
2242005
Intrinsic transistor reliability improvements from 22nm tri-gate technology
S Ramey, A Ashutosh, C Auth, J Clifford, M Hattendorf, J Hicks, R James, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 4C. 5.1-4C. 5.5, 2013
2042013
Generalized effective-mass approach for -type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers
A Rahman, MS Lundstrom, AW Ghosh
Journal of applied physics 97 (5), 053702, 2005
1952005
Memory cell using BTI effects in high-k metal gate MOS
WM Hafez, A Rahman, CH Jan
US Patent 8,432,751, 2013
1622013
RF CMOS technology scaling in high-k/metal gate era for RF SoC (system-on-chip) applications
CH Jan, M Agostinelli, H Deshpande, MA El-Tanani, W Hafez, U Jalan, ...
2010 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2010
1162010
Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects
A Rahman, G Klimeck, M Lundstrom
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005
812005
Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects
A Rahman, G Klimeck, M Lundstrom
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005
812005
Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations
J Wang, A Rahman, A Ghosh, G Klimeck, M Lundstrom
Applied Physics Letters 86 (9), 093113, 2005
752005
Bandstructure and orientation effects in ballistic Si and Ge nanowire FETs
J Wang, A Rahman, G Klimeck, M Lundstrom
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005
742005
Reliability studies of a 10nm high-performance and low-power CMOS technology featuring 3rd generation FinFET and 5th generation HK/MG
A Rahman, J Dacuna, P Nayak, G Leatherman, S Ramey
2018 IEEE International Reliability Physics Symposium (IRPS), 6F. 4-1-6F. 4-6, 2018
722018
Assessment of Ge n-MOSFETs by quantum simulation
A Rahman, A Ghosh, M Lundstrom
IEEE International Electron Devices Meeting 2003, 19.4. 1-19.4. 4, 2003
552003
A 32nm low power RF CMOS SOC technology featuring high-k/metal gate
P VanDerVoorn, M Agostinelli, SJ Choi, G Curello, H Deshpande, ...
2010 Symposium on VLSI Technology, 137-138, 2010
462010
Demand for Child Curative Care in Two Rural Thanas of Bangladesh: Effects of Income and Women’s Employment
A Levin, MA Rahman, Z Quayyum, S Routh, B Khuda
421998
Bandstructure effects in ballistic nanoscale MOSFETs
A Rahman, G Klimeck, TB Boykin, M Lundstrom
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
342004
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