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Efterpi Kalesaki
Efterpi Kalesaki
Postdoctoral researcher, Physics and Materials Science Research unit, University of Luxembourg
Overená e-mailová adresa na: physics.auth.gr
Názov
Citované v
Citované v
Rok
Dirac cones, topological edge states, and nontrivial flat bands in two-dimensional semiconductors with a honeycomb nanogeometry
E Kalesaki, C Delerue, CM Smith, W Beugeling, G Allan, ...
Physical review x 4 (1), 011010, 2014
1692014
Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two
E Kalesaki, WH Evers, G Allan, D Vanmaekelbergh, C Delerue
Physical review B 88 (11), 115431, 2013
922013
Topological states in multi-orbital HgTe honeycomb lattices
W Beugeling, E Kalesaki, C Delerue, YM Niquet, D Vanmaekelbergh, ...
Nature communications 6 (1), 6316, 2015
732015
Effect of edge threading dislocations on the electronic structure of InN
E Kalesaki, J Kioseoglou, L Lymperakis, P Komninou, T Karakostas
Applied Physics Letters 98 (7), 2011
282011
Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯ 2) AlN
GP Dimitrakopulos, E Kalesaki, J Kioseoglou, T Kehagias, A Lotsari, ...
Journal of Applied Physics 108 (10), 2010
252010
Polar AlN/GaN interfaces: structures and energetics
J Kioseoglou, E Kalesaki, L Lymperakis, GP Dimitrakopulos, P Komninou, ...
physica status solidi (a) 206 (8), 1892-1897, 2009
242009
Valence band splitting in Cu2(Sn,Ge,Si)S3: Effect on optical absorption spectra
J De Wild, E Kalesaki, L Wirtz, PJ Dale
physica status solidi (RRL)–Rapid Research Letters 11 (2), 1600410, 2017
232017
Strain accommodation and interfacial structure of AlN interlayers in GaN
GP Dimitrakopulos, E Kalesaki, P Komninou, T Kehagias, J Kioseoglou, ...
Crystal Research and Technology: Journal of Experimental and Industrial …, 2009
192009
Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material
J Kioseoglou, E Kalesaki, I Belabbas, J Chen, G Nouet, H Kirmse, ...
Journal of Applied Physics 110 (5), 2011
182011
Electronic structure of 1/6< 202¯ 3> partial dislocations in wurtzite GaN
J Kioseoglou, E Kalesaki, L Lymperakis, J Neugebauer, P Komninou, ...
Journal of Applied Physics 109 (8), 2011
182011
Study of InN/GaN interfaces using molecular dynamics
J Kioseoglou, E Kalessaki, GP Dimitrakopulos, P Komninou, T Karakostas
Journal of materials science 43, 3982-3988, 2008
182008
Atomic scale morphology, growth behaviour and electronic properties of semipolar {10 13} GaN surfaces
J Kioseoglou, E Kalesaki, L Lymperakis, T Karakostas, P Komninou
J. Phys.: Condens. Matter 25 (045008), 045008, 2013
92013
Atomistic modeling and HRTEM analysis of misfit dislocations in InN/GaN heterostructures
J Kioseoglou, E Kalesaki, GP Dimitrakopulos, T Kehagias, P Komninou, ...
Applied surface science 260, 23-28, 2012
92012
Reconstructions and electronic structure of (112¯ 2) and (112¯ 2¯) semipolar AlN surfaces
E Kalesaki, L Lymperakis, J Kioseoglou, J Neugebauer, T Karakostas, ...
Journal of Applied Physics 112 (3), 2012
92012
Quantum efficiency measurements and modeling as tools to monitor air annealing of Cu2SnS 3 solar cells
J De Wild, E Kalesaki, EVC Robert, PJ Dale
IEEE Journal of Photovoltaics 7 (1), 268-272, 2016
82016
Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires
J Kioseoglou, E Kalesaki, I Belabbas, J Chen, G Nouet, P Komninou, ...
physica status solidi c 9 (3‐4), 484-487, 2012
72012
Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures
J Kioseoglou, P Komninou, J Chen, G Nouet, E Kalesaki, T Karakostas
physica status solidi (c) 11 (2), 289-292, 2014
52014
Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects
J Kioseoglou, A Lotsari, E Kalesaki, GP Dimitrakopulos
Journal of Applied Physics 111 (3), 2012
52012
Indium adsorption and incorporation mechanisms in AlN
E Kalesaki, J Kioseoglou, P Komninou, T Karakostas
Journal of materials science 46 (12), 4377-4383, 2011
42011
Preparation and study of 2-D semiconductors with Dirac type bands due to the honeycomb nanogeometry
E Kalesaki, MP Boneschanscher, JJ Geuchies, C Delerue, CM Smith, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III …, 2014
22014
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–20