| Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing D Kuzum, RGD Jeyasingh, B Lee, HSP Wong Nano letters 12 (5), 2179-2186, 2012 | 1340 | 2012 |
| Synaptic electronics: materials, devices and applications D Kuzum, S Yu, HSP Wong Nanotechnology 24 (38), 382001, 2013 | 1320 | 2013 |
| An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation S Yu, Y Wu, R Jeyasingh, D Kuzum, HSP Wong IEEE Transactions on Electron Devices 58 (8), 2729-2737, 2011 | 890 | 2011 |
| Artificial optic-neural synapse for colored and color-mixed pattern recognition S Seo, SH Jo, S Kim, J Shim, S Oh, JH Kim, K Heo, JW Choi, C Choi, S Oh, ... Nature Communications 9 (1), 5106, 2018 | 593 | 2018 |
| Transparent and flexible low noise graphene electrodes for simultaneous electrophysiology and neuroimaging D Kuzum, H Takano, E Shim, JC Reed, H Juul, AG Richardson, J De Vries, ... Nature communications 5 (1), 5259, 2014 | 579 | 2014 |
| Bioresorbable silicon electronics for transient spatiotemporal mapping of electrical activity from the cerebral cortex KJ Yu, D Kuzum, SW Hwang, BH Kim, H Juul, NH Kim, SM Won, K Chiang, ... Nature materials 15 (7), 782-791, 2016 | 493 | 2016 |
| On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ... IEEE Transactions on Electron Devices 55 (2), 547-556, 2008 | 456 | 2008 |
| Transformation of cortex-wide emergent properties during motor learning H Makino, C Ren, H Liu, AN Kim, N Kondapaneni, X Liu, D Kuzum, ... Neuron 94 (4), 880-890. e8, 2017 | 276 | 2017 |
| N-Channel Germanium MOSFET Fabricated Below 360by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs JH Park, D Kuzum, WS Jung, KC Saraswat IEEE Electron Device Letters 32 (3), 234-236, 2011 | 265 | 2011 |
| Ge-interface engineering with ozone oxidation for low interface-state density D Kuzum, T Krishnamohan, AJ Pethe, AK Okyay, Y Oshima, Y Sun, ... IEEE Electron Device Letters 29 (4), 328-330, 2008 | 236 | 2008 |
| Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array SB Eryilmaz, D Kuzum, R Jeyasingh, SB Kim, M BrightSky, C Lam, ... Frontiers in neuroscience 8, 205, 2014 | 230 | 2014 |
| Flexible neural electrode array based-on porous graphene for cortical microstimulation and sensing Y Lu, H Lyu, AG Richardson, TH Lucas, D Kuzum Scientific reports 6 (1), 1-9, 2016 | 222 | 2016 |
| Deep 2-photon imaging and artifact-free optogenetics through transparent graphene microelectrode arrays M Thunemann, Y Lu, X Liu, K Kılıç, M Desjardins, M Vandenberghe, ... Nature communications 9 (1), 2035, 2018 | 187 | 2018 |
| Ge (100) and (111) N- and P-FETs With High Mobility and Low-Mobility Characterization D Kuzum, AJ Pethe, T Krishnamohan, KC Saraswat IEEE transactions on electron devices 56 (4), 648-655, 2009 | 128 | 2009 |
| Energy-efficient Mott activation neuron for full-hardware implementation of neural networks S Oh, Y Shi, J Del Valle, P Salev, Y Lu, Z Huang, Y Kalcheim, IK Schuller, ... Nature nanotechnology 16 (6), 680-687, 2021 | 124 | 2021 |
| Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays Y Shi, L Nguyen, S Oh, X Liu, F Koushan, JR Jameson, D Kuzum Nature communications 9 (1), 5312, 2018 | 118 | 2018 |
| Device and system level design considerations for analog-non-volatile-memory based neuromorphic architectures SB Eryilmaz, D Kuzum, S Yu, HSP Wong 2015 IEEE international electron devices meeting (IEDM), 4.1. 1-4.1. 4, 2015 | 108 | 2015 |
| High-mobility Ge N-MOSFETs and mobility degradation mechanisms D Kuzum, T Krishnamohan, A Nainani, Y Sun, PA Pianetta, HSP Wong, ... IEEE transactions on electron devices 58 (1), 59-66, 2010 | 108 | 2010 |
| Low-energy robust neuromorphic computation using synaptic devices D Kuzum, RGD Jeyasingh, S Yu, HSP Wong IEEE Transactions on Electron Devices 59 (12), 3489-3494, 2012 | 101 | 2012 |
| Interface-engineered Ge (100) and (111), N-and P-FETs with high mobility D Kuzum, AJ Pethe, T Krishnamohan, Y Oshima, Y Sun, JP McVittie, ... 2007 IEEE International Electron Devices Meeting, 723-726, 2007 | 95 | 2007 |
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityVerified email at stanford.edu
