Sylvie Schamm-Chardon
Sylvie Schamm-Chardon
Overená e-mailová adresa na:
Citované v
Citované v
A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications
L Mazet, SM Yang, SV Kalinin, S Schamm-Chardon, C Dubourdieu
Science and technology of advanced materials 16 (3), 036005, 2015
Structural characterization of amorphous chemical vapor deposited coatings
A Bendeddouche, R Berjoan, E Beche, T Merle-Mejean, S Schamm, ...
Journal of Applied Physics 81 (9), 6147-6154, 1997
Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS
S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ...
Ultramicroscopy 108 (4), 346-357, 2008
Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2
F Loumagne, F Langlais, R Naslain, S Schamm, D Dorignac, J Sévely
Thin Solid Films 254 (1-2), 75-82, 1995
Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers
H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ...
Journal of applied physics 99 (4), 2006
Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology
T Müller, KH Heinig, W Möller, C Bonafos, H Coffin, N Cherkashin, ...
Applied physics letters 85 (12), 2373-2375, 2004
Study of the dielectric properties near the band gap by VEELS: gap measurement in bulk materials
S Schamm, G Zanchi
Ultramicroscopy 96 (3-4), 559-564, 2003
Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing
D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, ...
Microelectronic Engineering 85 (12), 2411-2413, 2008
Si and Ge nanocrystals for future memory devices
C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ...
Materials Science in Semiconductor Processing 15 (6), 615-626, 2012
Correlations between gas phase supersaturation, nucleation process and physico-chemical characteristics of silicon carbide deposited from Si-CH-Cl system on silica substrates
D Lespiaux, F Langlais, R Naslain, S Schamm, J Sevely
Journal of materials science 30, 1500-1510, 1995
The K2ZrF6 wetting process: Effect of surface chemistry on the ability of a SiC-Fiber preform to be impregnated by aluminum
S Schamm, R Fedou, JP Rocher, JM Quenisset, R Naslain
Metallurgical Transactions A 22, 2133-2139, 1991
The energy band alignment of Si nanocrystals in SiO2
G Seguini, S Schamm-Chardon, P Pellegrino, M Perego
Applied Physics Letters 99 (8), 2011
Dielectric properties of Er− doped HfO2 (Er∼ 15%) grown by atomic layer deposition for high-κ gate stacks
C Wiemer, L Lamagna, S Baldovino, M Perego, S Schamm-Chardon, ...
Applied Physics Letters 96 (18), 2010
Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon
G Seguini, C Castro, S Schamm-Chardon, G Benassayag, P Pellegrino, ...
Applied Physics Letters 103 (2), 2013
Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications
C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ...
Solid-State Electronics 49 (11), 1734-1744, 2005
Atomic layer deposition of LaxZr1− xO2− δ (x= 0.25) high-k dielectrics for advanced gate stacks
D Tsoutsou, L Lamagna, SN Volkos, A Molle, S Baldovino, S Schamm, ...
Applied Physics Letters 94 (5), 2009
O3-based atomic layer deposition of hexagonal La2O3 films on Si (100) and Ge (100) substrates
L Lamagna, C Wiemer, M Perego, SN Volkos, S Baldovino, D Tsoutsou, ...
Journal of Applied Physics 108 (8), 2010
Chemical/Structural nanocharacterization and electrical properties of ALD-Grown La2O3∕ Si interfaces for advanced gate stacks
S Schamm, PE Coulon, S Miao, SN Volkos, LH Lu, L Lamagna, C Wiemer, ...
Journal of The Electrochemical Society 156 (1), H1, 2008
Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors
M Brunet, HM Kotb, L Bouscayrol, E Scheid, M Andrieux, C Legros, ...
Thin solid films 519 (16), 5638-5644, 2011
Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge (100)
L Lamagna, C Wiemer, S Baldovino, A Molle, M Perego, ...
Applied Physics Letters 95 (12), 2009
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Články 1–20