Ngoc Duy Nguyen
Ngoc Duy Nguyen
Université de Liège, CESAM | Q-MAT | SPIN and Department of Physics
Overená e-mailová adresa na: - Domovská stránka
Citované v
Citované v
Metallic nanowire networks: effects of thermal annealing on electrical resistance
DP Langley, M Lagrange, G Giusti, C Jiménez, Y Bréchet, ND Nguyen, ...
Nanoscale 6 (22), 13535-13543, 2014
Determination of charge-carrier transport in organic devices by admittance spectroscopy: Application to hole mobility in α-NPD
ND Nguyen, M Schmeits, HP Loebl
Physical Review B 75 (7), 075307, 2007
Stability enhancement of silver nanowire networks with conformal ZnO coatings deposited by atmospheric pressure spatial atomic layer deposition
A Khan, VH Nguyen, D Muñoz-Rojas, S Aghazadehchors, C Jiménez, ...
ACS applied materials & interfaces 10 (22), 19208-19217, 2018
Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration
D Bellet, M Lagrange, T Sannicolo, S Aghazadehchors, VH Nguyen, ...
Materials 10 (6), 570, 2017
ZnO/CuCrO2 Core–Shell Nanowire Heterostructures for Self‐Powered UV Photodetectors with Fast Response
T Cossuet, J Resende, L Rapenne, O Chaix‐Pluchery, C Jiménez, ...
Advanced Functional Materials 28 (43), 1803142, 2018
Advances in flexible metallic transparent electrodes
VH Nguyen, DT Papanastasiou, J Resende, L Bardet, T Sannicolo, ...
Small 18 (19), 2106006, 2022
Integration of III-V on Si for High-Mobility CMOS
N Waldron, G Wang, ND Nguyen, T Orzali, C Merckling, G Brammertz, ...
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International, 1-2, 2012
Physical routes for the synthesis of kesterite
T Ratz, G Brammertz, R Caballero, M León, S Canulescu, J Schou, ...
Journal of Physics: Energy 1 (4), 042003, 2019
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors
S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ...
ACS applied materials & interfaces 7 (1), 62-67, 2014
Direct Imaging of the Onset of Electrical Conduction in Silver Nanowire Networks by Infrared Thermography: Evidence of Geometrical Quantized Percolation
T Sannicolo, D Muñoz-Rojas, ND Nguyen, S Moreau, C Celle, ...
Nano Letters 16 (11), 7046-7053, 2016
Selective area growth of InP in shallow-trench-isolated structures on off-axis Si (001) substrates
G Wang, MR Leys, ND Nguyen, R Loo, G Brammertz, O Richard, ...
Journal of the Electrochemical Society 157 (11), H1023, 2010
Versatility of bilayer metal oxide coatings on silver nanowire networks for enhanced stability with minimal transparency loss
S Aghazadehchors, VH Nguyen, D Muñoz-Rojas, C Jiménez, L Rapenne, ...
Nanoscale 11 (42), 19969-19979, 2019
Note on the numerical solution of the scalar Helmholtz equation in a nanotorus with uniform Dirichlet boundary conditions
ND Nguyen, R Evrard, MA Stroscio
arXiv preprint arXiv:1603.06213, 2016
Magnetic flux penetration in Nb superconducting films with lithographically defined microindentations
J Brisbois, OA Adami, JI Avila, M Motta, WA Ortiz, ND Nguyen, ...
Physical Review B 93 (5), 054521, 2016
Numerical simulation of impedance and admittance of OLEDs
ND Nguyen, M Schmeits
physica status solidi (a) 203 (8), 1901-1914, 2006
Percolation in networks of 1-dimensional objects: comparison between Monte Carlo simulations and experimental observations
DP Langley, M Lagrange, ND Nguyen, D Bellet
Nanoscale horizons 3 (5), 545-550, 2018
Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes
ND Nguyen, M Germain, M Schmeits, B Schineller, M Heuken
Journal of Applied Physics 90 (2), 985-993, 2001
Si/SiGe Resonant Interband Tunneling Diodes Incorporating -Doping Layers Grown by Chemical Vapor Deposition
SY Park, R Anisha, PR Berger, R Loo, ND Nguyen, S Takeuchi, ...
IEEE Electron Device Letters 30 (11), 1173-1175, 2009
A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
S Van Huylenbroeck, A Sibaja-Hernandez, R Venegas, S You, ...
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 5-8, 2009
Magnesium‐doped cuprous oxide (Mg:Cu2O) thin films as a transparent p‐type semiconductor
J Resende, C Jiménez, ND Nguyen, JL Deschanvres
physica status solidi (a) 213 (9), 2296-2302, 2016
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–20