| Failure and reliability analysis of a SiC power module based on stress comparison to a Si device B Hu, JO Gonzalez, L Ran, H Ren, Z Zeng, W Lai, B Gao, O Alatise, H Lu, ... IEEE Transactions on device and materials reliability 17 (4), 727-737, 2017 | 158 | 2017 |
| Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015 | 151 | 2015 |
| Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs JO Gonzalez, R Wu, S Jahdi, O Alatise IEEE Transactions on Industrial Electronics 67 (9), 7375-7385, 2019 | 150 | 2019 |
| An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs JO Gonzalez, O Alatise, J Hu, L Ran, PA Mawby IEEE Transactions on Power Electronics 32 (10), 7954-7966, 2016 | 117 | 2016 |
| An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ... IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014 | 109 | 2014 |
| Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby IEEE Transactions on Industrial Electronics 63 (4), 2092-2102, 2016 | 86 | 2016 |
| The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, PA Mawby IEEE Transactions on Power Electronics 31 (6), 4526-4535, 2015 | 85 | 2015 |
| A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets JAO Gonzalez, O Alatise IEEE Transactions on Power Electronics 34 (6), 5737-5747, 2018 | 70 | 2018 |
| Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs R Bonyadi, O Alatise, S Jahdi, J Hu, JAO Gonzalez, L Ran, PA Mawby IEEE Transactions on Power Electronics 30 (12), 6978-6992, 2015 | 41 | 2015 |
| Temperature sensitive electrical parameters for condition monitoring in SiC power MOSFETs JO Gonzalez, O Alatise, J Hu, L Ran, P Mawby IET Digital Library, 2016 | 31 | 2016 |
| Bias temperature instability and condition monitoring in SiC power MOSFETs JO Gonzalez, O Alatise Microelectronics Reliability 88, 557-562, 2018 | 28 | 2018 |
| The potential of SiC cascode JFETs in electric vehicle traction inverters R Wu, JO Gonzalez, Z Davletzhanova, PA Mawby, O Alatise IEEE Transactions on Transportation Electrification 5 (4), 1349-1359, 2019 | 27 | 2019 |
| Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs JO Gonzalez, O Alatise IEEE Transactions on Industry Applications 57 (2), 1664-1676, 2020 | 25 | 2020 |
| Comparison of short circuit failure modes in sic planar mosfets, sic trench mosfets and sic cascode jfets E Bashar, R Wu, N Agbo, S Mendy, S Jahdi, JO Gonzalez, O Alatise 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 24 | 2021 |
| Impact of BTI-induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs JO Gonzalez, O Alatise IEEE Transactions on Power Electronics 36 (3), 3279-3291, 2020 | 24 | 2020 |
| Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters JO Gonzalez, O Alatise 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 837-844, 2018 | 24 | 2018 |
| Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation S Jahdi, O Alatise, J Ortiz-Gonzalez, P Gammon, L Ran, P Mawby 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 24 | 2015 |
| Current sharing of parallel sic mosfets under short circuit conditions R Wu, S Mendy, JO Gonzalez, S Jahdi, O Alatise 2021 23rd European Conference on Power Electronics and Applications (EPE'21 …, 2021 | 22 | 2021 |
| Analysis of power device failure under avalanche mode Conduction P Alexakis, O Alatise, J Hu, S Jahdi, JO Gonzalez, L Ran, PA Mawby 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE …, 2015 | 20 | 2015 |
| Dynamic characterization of SiC and GaN devices with BTI stresses JO Gonzalez, M Hedayati, S Jahdi, BH Stark, O Alatise Microelectronics Reliability 100, 113389, 2019 | 19 | 2019 |
Layi Alatise,PhD, CEng, FIET, SMIEEE, Professor of Power Electronics, University of WarwickVerified email at warwick.ac.uk
