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Kaan Oguz
Kaan Oguz
Senior Research Engineer, Components Research, Intel
Verified email at tcd.ie
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Cited by
Cited by
Year
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
1492018
Balancing energy barrier between states in perpendicular magnetic tunnel junctions
CC Kuo, BS Doyle, A Raychowdhury, RG Mojarad, K Oguz
US Patent 9,472,748, 2016
812016
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
K Oguz, ML Doczy, B Doyle, U Shah, DL Kencke, RG MOJARAD, ...
US Patent 8,836,056, 2014
782014
Magnetoresistance in magnetic tunnel junctions with an organic barrier and an MgO spin filter
G Szulczewski, H Tokuc, K Oguz, JMD Coey
Applied Physics Letters 95 (20), 2009
682009
Magnetic dead layers in sputtered Co40Fe40B20 films
K Oguz, P Jivrajka, M Venkatesan, G Feng, JMD Coey
Journal of Applied Physics 103 (7), 2008
592008
Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes
H Kurt, K Rode, K Oguz, M Boese, CC Faulkner, JMD Coey
Applied Physics Letters 96 (26), 2010
512010
Perpendicular magnetic anisotropy in CoFeB/Pd bilayers
C Fowley, N Decorde, K Oguz, K Rode, H Kurt, JMD Coey
IEEE transactions on magnetics 46 (6), 2116-2118, 2010
412010
Giant tunneling magnetoresistance with electron beam evaporated MgO barrier and CoFeB electrodes
H Kurt, K Oguz, T Niizeki, JMD Coey
Journal of Applied Physics 107 (8), 2010
332010
Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
BS Doyle, CC Kuo, K Oguz, U Shah, EV Karpov, RG Mojarad, ML Doczy, ...
US Patent 8,796,797, 2014
322014
Layer transferred ferroelectric memory devices
KP O'brien, BS Doyle, K Oguz, CC Kuo, ML Doczy, TK Indukuri
US Patent App. 16/082,261, 2019
312019
Electric field induced changes in the coercivity of a thin-film ferromagnet
C Fowley, K Rode, K Oguz, H Kurt, JMD Coey
Journal of Physics D: Applied Physics 44 (30), 305001, 2011
282011
Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same
BS Doyle, DL Kencke, CC Kuo, U Shah, K Oguz, ML Doczy, S Suri, ...
US Patent 8,786,040, 2014
242014
CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist
N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
232020
Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers
CC Kuo, K Oguz, ML Doczy, BS Doyle, S Suri, RS Chau, DL Kencke, ...
US Patent App. 14/039,668, 2015
232015
Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication
K Oguz, T Gosavi, S Manipatruni, C Kuo, M Doczy, K O'brien
US Patent 11,257,613, 2022
222022
High stability spintronic memory
CC Kuo, K Oguz, BS Doyle, EV Karpov, RG Mojarad, DL Kencke, ...
US Patent 9,231,194, 2016
192016
High blocking temperature spin orbit torque electrode
T Gosavi, S Manipatruni, K Oguz, I Young, K O'brien, G Allen, N Sato
US Patent 11,251,365, 2022
182022
Investigation of extrinsic damping caused by magnetic dead layer in Ta-CoFeB-MgO multilayers with perpendicular anisotropy
N Sato, KP O'Brien, K Millard, B Doyle, K Oguz
Journal of Applied Physics 119 (9), 2016
182016
Spin orbit torque (sot) memory devices with enhanced stability and their methods of fabrication
K Oguz, C Kuo, M Doczy, K O'brien
US Patent App. 15/942,349, 2019
162019
Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer
CC Kuo, K Oguz, BS Doyle, ML Doczy, DL Kencke, S Suri, RS Chau
US Patent 9,882,121, 2018
162018
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