Shotaro Takeuchi
Shotaro Takeuchi
Neznáme pridruženie
Žiadny overený e-mail
Citované v
Citované v
Growth of highly strain-relaxed Ge1− xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
S Takeuchi, Y Shimura, O Nakatsuka, S Zaima, M Ogawa, A Sakai
Applied physics letters 92 (23), 2008
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ...
Microelectronic Engineering 88 (4), 342-346, 2011
High quality Ge virtual substrates on Si wafers with standard STI patterning
R Loo, G Wang, L Souriau, JC Lin, S Takeuchi, G Brammertz, M Caymax
Journal of The Electrochemical Society 157 (1), H13, 2009
Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates
O Nakatsuka, N Tsutsui, Y Shimura, S Takeuchi, A Sakai, S Zaima
Japanese Journal of Applied Physics 49 (4S), 04DA10, 2010
Growth and structure evaluation of strain-relaxed Ge1− xSnx buffer layers grown on various types of substrates
S Takeuchi, A Sakai, K Yamamoto, O Nakatsuka, M Ogawa, S Zaima
Semiconductor science and technology 22 (1), S231, 2006
Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials
S Yamasaka, Y Nakamura, T Ueda, S Takeuchi, A Sakai
Scientific reports 5 (1), 14490, 2015
Tensile strained Ge layers on strain-relaxed Ge1− xSnx/virtual Ge substrates
S Takeuchi, A Sakai, O Nakatsuka, M Ogawa, S Zaima
Thin Solid Films 517 (1), 159-162, 2008
Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials
S Yamasaka, K Watanabe, S Sakane, S Takeuchi, A Sakai, K Sawano, ...
Scientific Reports 6, 22838, 2016
Growth of Ge1− xSnx heteroepitaxial layers with very high Sn contents on InP (001) substrates
M Nakamura, Y Shimura, S Takeuchi, O Nakatsuka, S Zaima
Thin Solid Films 520 (8), 3201-3205, 2012
Ge1− xSnx stressors for strained-Ge CMOS
S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ...
Solid-State Electronics 60 (1), 53-57, 2011
Molecular beam deposition of Al2O3 on p-Ge (001)/Ge0. 95Sn0. 05 heterostructure and impact of a Ge-cap interfacial layer
C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ...
Applied Physics Letters 98 (19), 2011
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
B Vincent, R Loo, W Vandervorst, J Delmotte, B Douhard, VK Valev, ...
Solid-State Electronics 60 (1), 116-121, 2011
Formation of Ni (Ge1− xSnx) layers with solid-phase reaction in Ni/Ge1− xSnx/Ge systems
T Nishimura, O Nakatsuka, Y Shimura, S Takeuchi, B Vincent, ...
Solid-State Electronics 60 (1), 46-52, 2011
Si/SiGe Resonant Interband Tunneling Diodes Incorporating -Doping Layers Grown by Chemical Vapor Deposition
SY Park, R Anisha, PR Berger, R Loo, ND Nguyen, S Takeuchi, ...
IEEE electron device letters 30 (11), 1173-1175, 2009
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
G Wang, R Loo, S Takeuchi, L Souriau, JC Lin, A Moussa, H Bender, ...
Thin Solid Films 518 (9), 2538-2541, 2010
Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition
S Takeuchi, ND Nguyen, FE Leys, R Loo, T Conard, W Vandervorst, ...
ECS Transactions 16 (10), 495, 2008
In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge (001) substrates
Y Shimura, S Takeuchi, O Nakatsuka, B Vincent, F Gencarelli, T Clarysse, ...
Thin Solid Films 520 (8), 3206-3210, 2012
Growth and characterization of heteroepitaxial layers of GeSiSn ternary alloy
T Yamaha, O Nakatsuka, S Takeuchi, W Takeuchi, N Taoka, K Araki, ...
ECS Transactions 50 (9), 907, 2013
Control of interfacial properties of Al2O3/Ge gate stack structure using radical nitridation technique
K Kato, S Kyogoku, M Sakashita, W Takeuchi, H Kondo, S Takeuchi, ...
Japanese journal of applied physics 50 (10S), 10PE02, 2011
Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers
Y Moriyama, K Ikeda, S Takeuchi, Y Kamimuta, Y Nakamura, K Izunome, ...
Applied Physics Express 7 (8), 086501, 2014
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–20