Dan Bergstrom
Dan Bergstrom
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A 45nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging
K Mistry, C Allen, C Auth, B Beattie, D Bergstrom, M Bost, M Brazier, ...
2007 IEEE International Electron Devices Meeting, 247-250, 2007
A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
C Auth, C Allen, A Blattner, D Bergstrom, M Brazier, M Bost, M Buehler, ...
2012 symposium on VLSI technology (VLSIT), 131-132, 2012
Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering
JE Greene, JE Sundgren, L Hultman, I Petrov, DB Bergstrom
Applied physics letters 67 (20), 2928-2930, 1995
A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate …
C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017
High‐flux low‐energy (≂20 eV) N+2 ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation
L Hultman, JE Sundgren, JE Greene, DB Bergstrom, I Petrov
Journal of Applied Physics 78 (9), 5395-5403, 1995
High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors
P Packan, S Akbar, M Armstrong, D Bergstrom, M Brazier, H Deshpande, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
Ion-assisted growth of Ti1− xAlxN/Ti1− yNbyN multilayers by combined cathodic-arc/magnetron-sputter deposition
I Petrov, P Losbichler, D Bergstrom, JE Greene, WD Münz, T Hurkmans, ...
Thin Solid Films 302 (1-2), 179-192, 1997
45nm Transistor Reliability.
J Hicks, D Bergstrom, M Hattendorf, J Jopling, J Maiz, S Pae, C Prasad, ...
Intel Technology Journal 12 (2), 2008
Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures
DB Bergstrom, CJ Wiegand
US Patent 11,063,151, 2021
Origin of compositional variations in sputter‐deposited TixW1−x diffusion barrier layers
DB Bergstrom, F Tian, I Petrov, J Moser, JE Greene
Applied physics letters 67 (21), 3102-3104, 1995
Morphology and microstructure of epitaxial Cu (001) films grown by primary ion deposition on Si and Ge substrates
BW Karr, YW Kim, I Petrov, DB Bergstrom, DG Cahill, JE Greene, ...
Journal of applied physics 80 (12), 6699-6705, 1996
Single-phase polycrystalline Ti1− xWxN alloys (0⩽ x⩽ 0.7) grown by UHV reactive magnetron sputtering: Microstructure and physical properties
JH Moser, F Tian, O Haller, DB Bergstrom, I Petrov, JE Greene, C Wiemer
Thin solid films 253 (1-2), 445-450, 1994
Tungsten gates for non-planar transistors
SS Pradhan, DB Bergstrom, JS Chun, J Chiu
US Patent 9,177,867, 2015
Intel 4 CMOS technology featuring advanced FinFET transistors optimized for high density and high-performance computing
B Sell, S An, J Armstrong, D Bahr, B Bains, R Bambery, K Bang, D Basu, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
metal/diffusion-barrier bilayers: Interfacial reaction pathways and kinetics during annealing
DB Bergstrom, I Petrov, JE Greene
Journal of applied physics 82 (5), 2312-2322, 1997
Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers
JS Chun, JRA Carlsson, P Desjardins, DB Bergstrom, I Petrov, JE Greene, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (1 …, 2001
Method of forming a wrap-around contact on a semiconductor device
JS Leib, RT Troeger, D Bergstrom
US Patent 9,704,744, 2017
Tungsten gates for non-planar transistors
SS Pradhan, DB Bergstrom, JS Chun, J Chiu
US Patent 9,580,776, 2017
Tungsten gates for non-planar transistors
SS Pradhan, DB Bergstrom, JS Chun, J Chiu
US Patent 9,637,810, 2017
Reaction paths and kinetics of aluminide formation in Al/epitaxial‐W (001) model diffusion barrier systems
DB Bergstrom, I Petrov, LH Allen, JE Greene
Journal of applied physics 78 (1), 194-203, 1995
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