Structure zone model for extreme shadowing conditions S Mukherjee, D Gall Thin Solid Films 527, 158-163, 2013 | 137 | 2013 |
Integrated circuits with selective gate electrode recess S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf US Patent 8,896,030, 2014 | 105 | 2014 |
Transport phenomena in conduction mode laser beam welding of Fe–Al dissimilar couple with Ta diffusion barrier S Mukherjee, S Chakraborty, R Galun, Y Estrin, I Manna International Journal of Heat and Mass Transfer 53 (23), 5274-5282, 2010 | 44 | 2010 |
Power law scaling during physical vapor deposition under extreme shadowing conditions S Mukherjee, D Gall Journal of Applied Physics 107 (8), 2010 | 35 | 2010 |
Anomalous scaling during glancing angle deposition S Mukherjee, D Gall Applied Physics Letters 95 (17), 2009 | 35 | 2009 |
Temperature-induced chaos during nanorod growth by physical vapor deposition S Mukherjee, CM Zhou, D Gall Journal of Applied Physics 105 (9), 2009 | 27 | 2009 |
Dual metal silicide structures for advanced integrated circuit structure fabrication S Mukherjee, V BHAGWAT, ML Hattendorf, CP Auth US Patent 10,796,968, 2020 | 24 | 2020 |
Dual metal silicide structures for advanced integrated circuit structure fabrication S Mukherjee, V BHAGWAT, ML Hattendorf, CP Auth US Patent 10,840,151, 2020 | 7 | 2020 |
Integrated circuits with recessed gate electrodes S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf US Patent 10,020,232, 2018 | 6 | 2018 |
Integrated circuits with selective gate electrode recess S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf US Patent 9,418,898, 2016 | 6 | 2016 |
Integrated circuits with recessed gate electrodes S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf US Patent 10,651,093, 2020 | 4 | 2020 |
Dual metal silicide structures for advanced integrated circuit structure fabrication S Mukherjee, V BHAGWAT, ML Hattendorf, CP Auth US Patent 11,508,626, 2022 | 3 | 2022 |
Dual contact process with selective deposition K Cook, AS Murthy, G Dewey, N Haratipour, C Choi, JK Jha, S Mukherjee US Patent App. 17/033,373, 2022 | 2 | 2022 |
Integrated circuit structures including a titanium silicide material DS Lavric, GA Glass, TT Troeger, S Vishwanath, JK Jha, JF Richards, ... US Patent 12,046,654, 2024 | 1 | 2024 |
Effect of Process Parameters on Laser Surface Hardening of Plain Carbon Eutectoid Steel S Mukherjee, S Chakraborty, I Manna Computers, Materials & Continua (CMC) 10 (3), 217, 2009 | 1 | 2009 |
Integrated circuits with recessed gate electrodes S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf US Patent App. 18/757,060, 2024 | | 2024 |
Integrated circuit structures including a titanium silicide material DS Lavric, GA Glass, TT Troeger, S Vishwanath, JK Jha, JF Richards, ... US Patent App. 18/737,616, 2024 | | 2024 |
Dual metal silicide structures for advanced integrated circuit structure fabrication S Mukherjee, V BHAGWAT, ML Hattendorf, CP Auth US Patent App. 18/435,609, 2024 | | 2024 |
Dual metal silicide structures for advanced integrated circuit structure fabrication S Mukherjee, V BHAGWAT, ML Hattendorf, CP Auth US Patent 11,961,767, 2024 | | 2024 |
Integrated circuits with recessed gate electrodes S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf US Patent App. 17/505,468, 2022 | | 2022 |