| Organoaminodisilane precursors and methods for depositing films comprising same M Xiao, X Lei, DP Spence, H Chandra, B Han, ML O'neill, SG Mayorga, ... US Patent App. 13/902,300, 2013 | 513 | 2013 |
| Organoaminodisilane precursors and methods for depositing films comprising same M Xiao, X Lei, DP Spence, H Chandra, B Han, ML O'neill, SG Mayorga, ... | 506 | 2020 |
| Barrier materials for display devices RG Ridgeway, AD Johnson, A Mallikarjunan, RN Vrtis, X Lei, ML O'neill, ... US Patent 10,319,862, 2019 | 472 | 2019 |
| Compositions and methods for making silicon containing films A Mallikarjunan, AD Johnson, M Wang, RN Vrtis, B Han, X Lei, ML O'neill US Patent 11,626,279, 2023 | 411 | 2023 |
| Compositions and Methods Using Same for Carbon Doped Silicon Containing Films H Chandra, X Lei, A Mallikarjunan, M Kim US Patent App. 15/654,426, 2018 | 313 | 2018 |
| Compositions and methods for the deposition of silicon oxide films A Mallikarjunan, H Chandra, M Xiao, X Lei, KS Cuthill, ML O'neill US Patent App. 14/661,652, 2015 | 296 | 2015 |
| Methods for depositing silicon nitride films H Chandra, A Mallikarjunan, X Lei, M Kim, KS Cuthill, ML O'neill US Patent 9,905,415, 2018 | 278 | 2018 |
| Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing HS Yang, R Malik, S Narasimha, Y Li, R Divakaruni, P Agnello, S Allen, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 237 | 2004 |
| β-phase tungsten nanorod formation by oblique-angle sputter deposition T Karabacak, A Mallikarjunan, JP Singh, D Ye, GC Wang, TM Lu Applied physics letters 83 (15), 3096-3098, 2003 | 151 | 2003 |
| Metal drift behavior in low dielectric constant organosiloxane polymer A Mallikarjunan, SP Murarka, TM Lu Applied Physics Letters 79 (12), 1855-1857, 2001 | 86 | 2001 |
| Method of producing highly strained PECVD silicon nitride thin films at low temperature MP Belyansky, O Gluschenkov, Y Li, A Mallikarjunan US Patent 7,585,704, 2009 | 61 | 2009 |
| Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies T Faraz, M van Drunen, HCM Knoops, A Mallikarjunan, I Buchanan, ... ACS Applied Materials & Interfaces 9 (2), 1858-1869, 2017 | 54 | 2017 |
| Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress M Belyansky, M Chace, O Gluschenkov, J Kempisty, N Klymko, A Madan, ... Journal of Vacuum Science & Technology A 26 (3), 517-521, 2008 | 54 | 2008 |
| Atomic Layer Deposition of Silicon Dioxide Using Aminosilanes Di-sec-butylaminosilane and Bis(tert-butylamino)silane with Ozone LF Pena, CE Nanayakkara, A Mallikarjunan, H Chandra, M Xiao, X Lei, ... The Journal of Physical Chemistry C 120 (20), 10927-10935, 2016 | 53 | 2016 |
| The effect of interfacial chemistry on metal ion penetration into polymeric films A Mallikarjunan, J Juneja, G Yang, SP Murarka, TM Lu MRS Online Proceedings Library (OPL) 734, B9. 60, 2002 | 45 | 2002 |
| Designing high performance precursors for atomic layer deposition of silicon oxide A Mallikarjunan, H Chandra, M Xiao, X Lei, RM Pearlstein, HR Bowen, ... Journal of Vacuum Science & Technology A 33 (1), 2015 | 42 | 2015 |
| Compositions and methods using same for carbon doped silicon containing films H Chandra, KS Cuthill, A Mallikarjunan, X Lei, MR MacDonald, M Xiao, ... US Patent 10,145,008, 2018 | 40 | 2018 |
| Resistivity of copper films at thicknesses near the mean free path of electrons in copper minimization of the diffuse scattering in copper A Mallikarjunan, S Sharma, SP Murarka Electrochemical and Solid-State Letters 3 (9), 437, 2000 | 39 | 2000 |
| Molecular caulking: a pore sealing CVD polymer for ultralow k dielectrics C Jezewski, CJ Wiegand, D Ye, A Mallikarjunan, D Liu, C Jin, WA Lanford, ... Journal of the Electrochemical Society 151 (7), F157, 2004 | 32 | 2004 |
| Mobile ion detection in organosiloxane polymer using triangular voltage sweep A Mallikarjunan, SP Murarka, TM Lu Journal of the Electrochemical Society 149 (10), F155, 2002 | 31 | 2002 |
