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James P. McVittie
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Year
Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen
G Zhang, D Mann, L Zhang, A Javey, Y Li, E Yenilmez, Q Wang, ...
Proceedings of the National Academy of Sciences 102 (45), 16141-16145, 2005
5482005
Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides
DB Kao, JP Mcvittie, WD Nix, KC Saraswat
IEEE transactions on electron devices 35 (1), 25-37, 1988
4511988
Two-dimensional thermal oxidation of silicon—I. Experiments
DB Kao, JP McVittie, WD Nix, KC Saraswat
IEEE Transactions on Electron Devices 34 (5), 1008-1017, 1987
3151987
Technology and reliability constrained future copper interconnects. I. Resistance modeling
P Kapur, JP McVittie, KC Saraswat
IEEE Transactions on electron devices 49 (4), 590-597, 2002
3032002
A tuned Langmuir probe for measurements in rf glow discharges
AP Paranjpe, JP McVittie, SA Self
Journal of Applied Physics 67 (11), 6718-6727, 1990
2411990
Ge-interface engineering with ozone oxidation for low interface-state density
D Kuzum, T Krishnamohan, AJ Pethe, AK Okyay, Y Oshima, Y Sun, ...
IEEE Electron Device Letters 29 (4), 328-330, 2008
2282008
Notching as an example of charging in uniform high density plasmas
T Kinoshita, M Hane, JP McVittie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
2041996
Thin-oxide damage from gate charging during plasma processing
S Fang, JP McVittie
IEEE Electron Device Letters 13 (5), 288-290, 1992
1881992
Electrical properties of heavily doped polycrystalline silicon-germanium films
TJ King, JP McVittie, KC Saraswat, JR Pfiester
IEEE Transactions on Electron devices 41 (2), 228-232, 1994
1851994
Simulation of profile evolution in silicon reactive ion etching with re‐emission and surface diffusion
VK Singh, ESG Shaqfeh, JP McVittie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
1851992
Technology and reliability constrained future copper interconnects. II. Performance implications
P Kapur, G Chandra, JP McVittie, KC Saraswat
IEEE Transactions on Electron Devices 49 (4), 598-604, 2002
1562002
How plasma etching damages thin gate oxides
CT Gabriel, JP McVittie
Solid State Technology 35 (6), 81-88, 1992
1381992
Resistive Switching Mechanism in Nonvolatile Memory Devices
Z Wang, PB Griffin, J McVittie, S Wong, PC McIntyre, Y Nishi
IEEE electron device letters 28 (1), 14-16, 2006
1232006
A 3‐dimensional model for low‐pressure chemical‐vapor‐deposition step coverage in trenches and circular vias
MM IslamRaja, MA Cappelli, JP McVittie, KC Saraswat
Journal of applied physics 70 (11), 7137-7140, 1991
1211991
SPEEDIE: A profile simulator for etching and deposition
JP McVittie, JC Rey, AJ Bariya, MM IslamRaja, LY Cheng, S Ravi, ...
Advanced Techniques for Integrated Circuit Processing 1392, 126-138, 1991
1141991
Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs
K Uchida, R Zednik, CH Lu, H Jagannathan, J McVittie, PC McIntyre, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
1102004
Monte Carlo low pressure deposition profile simulations
JC Rey, LY Cheng, JP McVittie, KC Saraswat
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9 (3 …, 1991
1051991
A model and experiments for thin oxide damage from wafer charging in magnetron plasmas
S Fang, JP McVittie
IEEE electron device letters 13 (6), 347-349, 1992
1021992
Interface-engineered Ge (100) and (111), N-and P-FETs with high mobility
D Kuzum, AJ Pethe, T Krishnamohan, Y Oshima, Y Sun, JP McVittie, ...
2007 IEEE International Electron Devices Meeting, 723-726, 2007
1002007
A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technology
TJ King, JR Pfiester, JD Shott, JP McVittie, KC Saraswat
International Technical Digest on Electron Devices, 253-256, 1990
1001990
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Articles 1–20