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Adrian Chasin
Adrian Chasin
Overená e-mailová adresa na: imec.be
Názov
Citované v
Citované v
Rok
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
H Mertens, R Ritzenthaler, A Hikavyy, MS Kim, Z Tao, K Wostyn, SA Chew, ...
2016 IEEE symposium on VLSI technology, 1-2, 2016
2132016
Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
H Mertens, R Ritzenthaler, A Chasin, T Schram, E Kunnen, A Hikavyy, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2016
1572016
High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts
A Chasin, S Steudel, K Myny, M Nag, TH Ke, S Schols, J Genoe, G Gielen, ...
Applied Physics Letters 101 (11), 2012
952012
Gigahertz operation of a-IGZO Schottky diodes
A Chasin, M Nag, A Bhoolokam, K Myny, S Steudel, S Schols, J Genoe, ...
IEEE transactions on electron devices 60 (10), 3407-3412, 2013
822013
Vertically stacked gate-all-around Si nanowire CMOS transistors with reduced vertical nanowires separation, new work function metal gate solutions, and DC/AC performance …
R Ritzenthaler, H Mertens, V Pena, G Santoro, A Chasin, K Kenis, ...
2018 IEEE International Electron Devices Meeting (IEDM), 21.5. 1-21.5. 4, 2018
812018
Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM
A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020
762020
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ...
Microelectronics Reliability 81, 186-194, 2018
602018
An integrated a-IGZO UHF energy harvester for passive RFID tags
A Chasin, V Volskiy, M Libois, K Myny, M Nag, M Rockelé, ...
IEEE Transactions on Electron Devices 61 (9), 3289-3295, 2014
572014
Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag
K Myny, M Rockelé, A Chasin, DV Pham, J Steiger, S Botnaras, D Weber, ...
IEEE Transactions on Electron Devices 61 (7), 2387-2393, 2014
572014
Single‐source dual‐layer amorphous IGZO thin‐film transistors for display and circuit applications
M Nag, A Chasin, M Rockele, S Steudel, K Myny, A Bhoolokam, A Tripathi, ...
Journal of the Society for Information Display 21 (3), 129-136, 2013
522013
High-performance a-IGZO thin film diode as selector for cross-point memory application
A Chasin, L Zhang, A Bhoolokam, M Nag, S Steudel, B Govoreanu, ...
IEEE Electron Device Letters 35 (6), 642-644, 2014
502014
Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells
A Veloso, B Parvais, P Matagne, E Simoen, T Huynh-Bao, V Paraschiv, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
402016
High performance a‐IGZO thin‐film transistors with mf‐PVD SiO2 as an etch‐stop‐layer
M Nag, S Steudel, A Bhoolokam, A Chasin, M Rockele, K Myny, J Maas, ...
Journal of the Society for Information Display 22 (1), 23-28, 2014
372014
Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors
H Arora, PE Malinowski, A Chasin, D Cheyns, S Steudel, S Schols, ...
Applied Physics Letters 106 (14), 2015
362015
Back-channel-etch amorphous indium–gallium–zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation
M Nag, A Bhoolokam, S Steudel, A Chasin, K Myny, J Maas, ...
Japanese Journal of Applied Physics 53 (11), 111401, 2014
342014
Efficient physical defect model applied to PBTI in high-κ stacks
G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
332017
Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm
A Belmonte, H Oh, S Subhechha, N Rassoul, H Hody, H Dekkers, ...
2021 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2021
322021
Scaling down of organic complementary logic gates for compact logic on foil
TH Ke, R Müller, B Kam, M Rockele, A Chasin, K Myny, S Steudel, ...
Organic Electronics 15 (6), 1229-1234, 2014
322014
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
312017
Novel back‐channel‐etch process flow based a‐IGZO TFTs for circuit and display applications on PEN foil
M Nag, M Rockele, S Steudel, A Chasin, K Myny, A Bhoolokam, ...
Journal of the Society for Information Display 21 (9), 369-375, 2013
312013
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