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Paul R. Berger
Paul R. Berger
Professor of Electrical and Computer Engineering, Ohio State University
Overená e-mailová adresa na: ieee.org - Domovská stránka
Názov
Citované v
Citované v
Rok
Role of strain and growth conditions on the growth front profile of In_x Ga_(1-x) As on GaAs during the pseudomorphic growth regime
PR Berger, K Chang, P Bhattacharya, J Singh, KK Bajaj
Applied Physics Letters 53 (8), 684-686, 1988
3191988
Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles
WJ Yoon, KY Jung, J Liu, T Duraisamy, R Revur, FL Teixeira, S Sengupta, ...
Solar Energy Materials and Solar Cells 94 (2), 128-132, 2010
2722010
Room temperature operation of epitaxially grown Si/SiGe/Si resonant interband tunneling diodes
SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73, pp. 2191-2193, 1998
2051998
Polymer solar cells: P3HT: PCBM and beyond
PR Berger, M Kim
Journal of Renewable and Sustainable Energy 10 (1), 2018
1692018
Substantial improvement by substrate misorientatioar in dc performance of Al~, Gao, 5As/GaAs/Al*,~ Ga~.~ As double-heterojunction/Up/U bipolar transistors grown by molecular …
N Chand, PFL Berger, NK Dutta
Appl. Phys. Lett 59 (2), 1991
1511991
Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography
MJ Word, I Adesida, PR Berger
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
1362003
Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection
Y Xu, PR Berger, JN Wilson, UHF Bunz
Applied physics letters 85 (18), 4219-4221, 2004
882004
Self-aligned and self-limited quantum dot nanoswitches and methods for making same
PR Berger
US Patent 7,015,497, 2006
862006
4.8% efficient poly (3-hexylthiophene)-fullerene derivative (1: 0.8) bulk heterojunction photovoltaic devices with plasma treated AgO_x/indium tin oxide anode modification
WJ Yoon, PR Berger
Applied Physics Letters 92 (1), 013306-013306-3, 2008
772008
Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts
C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ...
Applied Physics Letters 78 (6), 814-816, 2001
772001
Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR
N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ...
IEEE electron device letters 25 (9), 646-648, 2004
762004
Si-based resonant interband tunneling diodes and method of making interband tunneling diodes
PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel
US Patent 6,803,598, 2004
752004
Optical and electronic properties of SiGeC alloys grown on Si substrates
J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ...
Journal of crystal growth 157 (1-4), 386-391, 1995
721995
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
702000
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy
TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ...
Applied Physics Letters 109 (8), 2016
652016
peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications
N Jin, SY Chung, AT Rice, PR Berger, R Yu, PE Thompson, R Lake
Applied physics letters 83 (16), 3308-3310, 2003
642003
Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
PK Bhattacharya, S Dhar, P Berger, FY Juang
Applied physics letters 49 (8), 470-472, 1986
631986
Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation
S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ...
Solid-State Electronics 48 (10-11), 1907-1910, 2004
612004
In0. 53Ga0. 47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts
W Gao, AS Khan, PR Berger, RG Hunsperger, G Zydzik, HM O’Bryan, ...
Applied physics letters 65 (15), 1930-1932, 1994
611994
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger
Light: Science & Applications 7 (2), 17150-17150, 2018
602018
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
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