| Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD” E Ahvenniemi, AR Akbashev, S Ali, M Bechelany, M Berdova, S Boyadjiev, ... Journal of Vacuum Science & Technology A 35 (1), 2017 | 117 | 2017 |
| Vibrational and electrical properties of hexagonal La2O3 films G Scarel, A Debernardi, D Tsoutsou, S Spiga, SC Capelli, L Lamagna, ... Applied Physics Letters 91 (10), 2007 | 76 | 2007 |
| Atomic layer deposition of Ru from CpRu (CO) 2Et using O2 gas and O2 plasma N Leick, ROF Verkuijlen, L Lamagna, E Langereis, S Rushworth, ... Journal of Vacuum Science & Technology A 29 (2), 2011 | 61 | 2011 |
| Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method Y Shimizu, H Takamizawa, K Inoue, F Yano, Y Nagai, L Lamagna, ... Nanoscale 6 (2), 706-710, 2013 | 58 | 2013 |
| Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, ... Microelectronic Engineering 85 (12), 2411-2413, 2008 | 54 | 2008 |
| Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications C Wiemer, L Lamagna, M Fanciulli Semiconductor Science and Technology 27 (7), 074013, 2012 | 50 | 2012 |
| Dielectric properties of Er− doped HfO2 (Er∼ 15%) grown by atomic layer deposition for high-κ gate stacks C Wiemer, L Lamagna, S Baldovino, M Perego, S Schamm-Chardon, ... Applied Physics Letters 96 (18), 2010 | 49 | 2010 |
| Cubic/tetragonal phase stabilization in high-κ ZrO2 thin films grown using O3-based atomic layer deposition A Lamperti, L Lamagna, G Congedo, S Spiga Journal of The Electrochemical Society 158 (10), G221, 2011 | 48 | 2011 |
| Atomic layer deposition of LaxZr1− xO2− δ (x= 0.25) high-k dielectrics for advanced gate stacks D Tsoutsou, L Lamagna, SN Volkos, A Molle, S Baldovino, S Schamm, ... Applied Physics Letters 94 (5), 2009 | 42 | 2009 |
| O3-based atomic layer deposition of hexagonal La2O3 films on Si (100) and Ge (100) substrates L Lamagna, C Wiemer, M Perego, SN Volkos, S Baldovino, D Tsoutsou, ... Journal of Applied Physics 108 (8), 2010 | 38 | 2010 |
| Chemical/Structural nanocharacterization and electrical properties of ALD-Grown La2O3∕ Si interfaces for advanced gate stacks S Schamm, PE Coulon, S Miao, SN Volkos, LH Lu, L Lamagna, C Wiemer, ... Journal of The Electrochemical Society 156 (1), H1, 2008 | 37 | 2008 |
| Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge (100) L Lamagna, C Wiemer, S Baldovino, A Molle, M Perego, ... Applied Physics Letters 95 (12), 2009 | 36 | 2009 |
| Mechanisms for substrate-enhanced growth during the early stages of atomic layer deposition of alumina onto silicon nitride surfaces L Lamagna, C Wiemer, M Perego, S Spiga, J Rodriguez, D Santiago Coll, ... Chemistry of Materials 24 (6), 1080-1090, 2012 | 33 | 2012 |
| The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition A Andreozzi, L Lamagna, G Seguini, M Fanciulli, S Schamm-Chardon, ... Nanotechnology 22 (33), 335303, 2011 | 33 | 2011 |
| Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs, In0. 15Ga0. 85As) substrates A Molle, G Brammertz, L Lamagna, M Fanciulli, M Meuris, S Spiga Applied Physics Letters 95 (2), 2009 | 31 | 2009 |
| Transitivity of band offsets between semiconductor heterojunctions and oxide insulators VV Afanas’ev, HY Chou, M Houssa, A Stesmans, L Lamagna, A Lamperti, ... Applied Physics Letters 99 (17), 2011 | 26 | 2011 |
| Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode S Spiga, R Rao, L Lamagna, C Wiemer, G Congedo, A Lamperti, A Molle, ... Journal of Applied Physics 112 (1), 2012 | 24 | 2012 |
| Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer G Congedo, A Lamperti, L Lamagna, S Spiga Microelectronic engineering 88 (7), 1174-1177, 2011 | 24 | 2011 |
| Tuning the polarity of Si-nanowire transistors without the use of doping WM Weber, L Geelhaar, L Lamagna, M Fanciulli, F Kreupl, E Unger, ... 2008 8th IEEE Conference on Nanotechnology, 580-581, 2008 | 23 | 2008 |
| Thermal stability of high‐κ oxides on SiO2/Si or SixNy/SiO2/Si for charge‐trapping nonvolatile memories A Lamperti, E Cianci, O Salicio, L Lamagna, S Spiga, M Fanciulli Surface and interface analysis 45 (1), 390-393, 2013 | 22 | 2013 |
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaOverená e-mailová adresa na: unimib.it
