Sledovať
Tommaso Orzali
Tommaso Orzali
Overená e-mailová adresa na: asml.com
Názov
Citované v
Citované v
Rok
Bottom-Up Assembly of Single-Domain Titania Nanosheets on
T Orzali, M Casarin, G Granozzi, M Sambi, A Vittadini
Physical review letters 97 (15), 156101, 2006
932006
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
822011
GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction
T Orzali, A Vert, B O'Brien, JL Herman, S Vivekanand, RJW Hill
Journal of Applied Physics 118, 105307, 2015
672015
Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique
N Waldron, G Wang, ND Nguyen, T Orzali, C Merckling, G Brammertz, ...
ECS Transactions 45 (4), 115, 2012
642012
Selective area growth of InP on On-Axis Si (001) substrates with low antiphase boundary formation
R Loo, G Wang, T Orzali, N Waldron, C Merckling, MR Leys, O Richard, ...
Journal of The Electrochemical Society 159 (3), H260, 2012
382012
Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping
T Orzali, A Vert, B O'Brian, JL Herman, S Vivekanand, SS Papa Rao, ...
Journal of Applied Physics 120 (8), 2016
362016
L-nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2Gate-Stack
TW Kim, DH Koh, CS Shin, WK Park, T Orzali, C Hobbs, WP Maszara, ...
IEEE Electron Device Letters 36 (3), 223-225, 2015
352015
Strong Bonding of Single C60 Molecules to (1 × 2)-Pt(110):  an STM/DFT Investigation
M Casarin, D Forrer, T Orzali, M Petukhov, M Sambi, E Tondello, ...
The Journal of Physical Chemistry C 111 (26), 9365-9373, 2007
322007
Ultrathin TiO2 Films on (1×2)-Pt(110): a LEED, Photoemission, STM, and Theoretical Investigation
S Agnoli, T Orzali, M Sambi, A Vittadini, M Casarin, G Granozzi
The Journal of Physical Chemistry C 112 (50), 20038-20049, 2008
252008
Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack
TW Kim, HM Kwon, SH Shin, CS Shin, WK Park, E Chiu, M Rivera, JI Lew, ...
IEEE Electron Device Letters 36 (7), 672-674, 2015
242015
Temperature-Dependent Self-Assemblies of C60 on (1 × 2)-Pt(110):  A STM/DFT Investigation
T Orzali, D Forrer, M Sambi, A Vittadini, M Casarin, E Tondello
The Journal of Physical Chemistry C 112 (2), 378-390, 2008
242008
Reactive deposition of NiO ultrathin films on Pd (1 0 0)
T Orzali, S Agnoli, M Sambi, G Granozzi
Surface science 569 (1-3), 105-117, 2004
232004
Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers
T Orzali, A Vert, RTP Lee, A Norvilas, G Huang, JL Herman, RJW Hill, ...
Journal of crystal Growth 426, 243-247, 2015
192015
Growth and characterization of an In0. 53Ga0. 47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD
T Orzali, A Vert, TW Kim, PY Hung, JL Herman, S Vivekanand, G Huang, ...
Journal of Crystal Growth 427, 72-79, 2015
172015
Reactive growth of NiO ultrathin films on Pd (1 0 0): a multitechnique approach
S Agnoli, T Orzali, M Sambi, G Granozzi, J Schoiswohl, S Surnev, ...
Journal of electron spectroscopy and related phenomena 144, 465-469, 2005
162005
Integration of III-V on Si for high-mobility CMOS
N Waldron, G Wang, ND Nguyen, T Orzali, C Merckling, G Brammertz, ...
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012
142012
STM study of the initial stages of C60 adsorption on the Pt (1 1 0)-(1× 2) surface
T Orzali, M Petukhov, M Sambi, E Tondello
Applied surface science 252 (15), 5534-5537, 2006
132006
Technology options to reduce contact resistance in Nanoscale III-V MOSFETs
RTP Lee, WY Loh, R Tieckelmann, T Orzali, C Huffman, A Vert, G Huang, ...
ECS Transactions 66 (4), 125, 2015
72015
Integration of InP and InGaAs on 300 mm Si wafers using chemical mechanical planarization
A Vert, T Orzali, PR Satyavolu, G Whitener, B Petro
ECS Journal of Solid State Science and Technology 5 (9), P478, 2016
62016
Damage free Ar ion plasma surface treatment on In0. 53Ga0. 47As-on-silicon metal-oxide-semiconductor device
D Koh, SH Shin, J Ahn, S Sonde, HM Kwon, T Orzali, DH Kim, TW Kim, ...
Applied Physics Letters 107 (18), 2015
62015
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–20