Guy Brammertz
Guy Brammertz
Researcher, imec-imomec
Overená e-mailová adresa na: - Domovská stránka
Citované v
Citované v
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells
G Brammertz, M Buffière, S Oueslati, H ElAnzeery, K Ben Messaoud, ...
Applied Physics Letters 103 (16), 2013
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...
Applied Physics Letters 91 (13), 2007
Capacitance-voltage characterization of GaAs–Al2O3 interfaces
G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...
Applied Physics Letters 93 (18), 2008
Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
HC Lin, WE Wang, G Brammertz, M Meuris, M Heyns
Microelectronic Engineering 86 (7-9), 1554-1557, 2009
Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods
É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 2009
On the interface state density at In0. 53Ga0. 47As/oxide interfaces
G Brammertz, HC Lin, M Caymax, M Meuris, M Heyns, M Passlack
Applied Physics Letters 95 (20), 2009
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied toand InP Capacitors
G Brammertz, A Alian, DHC Lin, M Meuris, M Caymax, WE Wang
IEEE Transactions on Electron Devices 58 (11), 3890-3897, 2011
High quality Ge virtual substrates on Si wafers with standard STI patterning
R Loo, G Wang, L Souriau, JC Lin, S Takeuchi, G Brammertz, M Caymax
Journal of The Electrochemical Society 157 (1), H13, 2009
High efficiency perovskite solar cells using a PCBM/ZnO double electron transport layer and a short air-aging step
W Qiu, M Buffiere, G Brammertz, UW Paetzold, L Froyen, P Heremans, ...
Organic electronics 26, 30-35, 2015
Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
G Brammertz, Y Mols, S Degroote, V Motsnyi, M Leys, G Borghs, ...
Journal of applied physics 99 (9), 2006
Selective area growth of high quality InP on Si (001) substrates
G Wang, MR Leys, R Loo, O Richard, H Bender, N Waldron, G Brammertz, ...
Applied Physics Letters 97 (12), 2010
Capacitance–voltage characterization of GaAs–oxide interfaces
G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ...
Journal of the Electrochemical Society 155 (12), H945, 2008
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013
Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells
S Oueslati, G Brammertz, M Buffiere, H ElAnzeery, O Touayar, C Köble, ...
Thin Solid Films 582, 224-228, 2015
The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces
HC Lin, G Brammertz, K Martens, G De Valicourt, L Negre, WE Wang, ...
Applied physics letters 94 (15), 2009
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
Electrical properties of III-V/oxide interfaces
G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
KCN Chemical Etch for Interface Engineering in Cu2ZnSnSe4 Solar Cells
M Buffière, G Brammertz, S Sahayaraj, M Batuk, S Khelifi, D Mangin, ...
ACS applied materials & interfaces 7 (27), 14690-14698, 2015
Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution
D Lin, G Brammertz, S Sioncke, C Fleischmann, A Delabie, K Martens, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–20