| Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ... Journal of Applied Physics 118 (24), 2015 | 108 | 2015 |
| Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices PT Webster, AJ Shalindar, NA Riordan, C Gogineni, H Liang, AR Sharma, ... Journal of Applied Physics 119 (22), 2016 | 55 | 2016 |
| Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ... Applied Physics Letters 106 (6), 2015 | 48 | 2015 |
| Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material LK Casias, CP Morath, EH Steenbergen, GA Umana-Membreno, ... Applied Physics Letters 116 (18), 2020 | 42 | 2020 |
| Invited Article: A test-facility for large-area microchannel plate detector assemblies using a pulsed sub-picosecond laser B Adams, M Chollet, A Elagin, E Oberla, A Vostrikov, M Wetstein, R Obaid, ... Review of Scientific Instruments 84 (6), 2013 | 41 | 2013 |
| Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices PT Webster, NA Riordan, C Gogineni, S Liu, J Lu, XH Zhao, DJ Smith, ... Journal of Vacuum Science & Technology B 32 (2), 2014 | 37 | 2014 |
| Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction AJ Shalindar, PT Webster, BJ Wilkens, TL Alford, SR Johnson Journal of applied Physics 120 (14), 2016 | 30 | 2016 |
| Absorption edge characteristics of GaAs, GaSb, InAs, and InSb ST Schaefer, S Gao, PT Webster, RR Kosireddy, SR Johnson Journal of Applied Physics 127 (16), 2020 | 28 | 2020 |
| Investigation of MBE-grown InAs1− xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy J Lu, PT Webster, S Liu, YH Zhang, SR Johnson, DJ Smith Journal of Crystal Growth 425, 250-254, 2015 | 24 | 2015 |
| Molecular beam epitaxy growth and optical properties of InAsSbBi ST Schaefer, RR Kosireddy, PT Webster, SR Johnson Journal of Applied Physics 126 (8), 2019 | 21 | 2019 |
| Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy PT Webster, AJ Shalindar, ST Schaefer, SR Johnson Applied Physics Letters 111 (8), 2017 | 21 | 2017 |
| Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices RA Carrasco, CP Morath, PC Grant, G Ariyawansa, CA Stephenson, ... Journal of Applied Physics 129 (18), 2021 | 19 | 2021 |
| A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy H Li, S Liu, OO Cellek, D Ding, XM Shen, EH Steenbergen, J Fan, Z Lin, ... Journal of crystal growth 378, 145-149, 2013 | 18 | 2013 |
| Proton irradiation effects on InGaAs/InAsSb mid-wave barrier infrared detectors RA Carrasco, J George, D Maestas, ZM Alsaad, D Garnham, CP Morath, ... Journal of Applied Physics 130 (11), 2021 | 14 | 2021 |
| Orbital equivalence of terrestrial radiation tolerance experiments JV Logan, MP Short, PT Webster, CP Morath IEEE Transactions on Nuclear Science 67 (11), 2382-2391, 2020 | 12 | 2020 |
| Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data PT Webster, RA Carrasco, AT Newell, JV Logan, PC Grant, D Maestas, ... Journal of Applied Physics 133 (12), 2023 | 10 | 2023 |
| Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance AT Newell, JV Logan, RA Carrasco, ZM Alsaad, CP Hains, JM Duran, ... Applied Physics Letters 122 (17), 2023 | 9 | 2023 |
| Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy RA Carrasco, CP Morath, JV Logan, KB Woller, PC Grant, H Orozco, ... Applied Physics Letters 120 (3), 2022 | 9 | 2022 |
| Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi P Petluru, PC Grant, AJ Muhowski, IM Obermeier, MS Milosavljevic, ... Applied Physics Letters 117 (6), 2020 | 9 | 2020 |
| Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications LK Casias, CP Morath, EH Steenbergen, PT Webster, JK Kim, VM Cowan, ... Infrared Physics & Technology 96, 184-191, 2019 | 9 | 2019 |
