| Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices HS Kim, OO Cellek, ZY Lin, ZY He, XH Zhao, S Liu, H Li, YH Zhang Applied Physics Letters 101 (16), 2012 | 179 | 2012 |
| Real-time dynamic single-molecule protein sequencing on an integrated semiconductor device BD Reed, MJ Meyer, V Abramzon, O Ad, O Ad, P Adcock, FR Ahmad, ... Science 378 (6616), 186-192, 2022 | 63 | 2022 |
| Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors D Zuo, R Liu, D Wasserman, J Mabon, ZY He, S Liu, YH Zhang, ... Applied Physics Letters 106 (7), 2015 | 51 | 2015 |
| Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy S Liu, H Li, OO Cellek, D Ding, XM Shen, ZY Lin, EH Steenbergen, J Fan, ... Applied Physics Letters 102 (7), 2013 | 19 | 2013 |
| A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy H Li, S Liu, OO Cellek, D Ding, XM Shen, EH Steenbergen, J Fan, Z Lin, ... Journal of crystal growth 378, 145-149, 2013 | 18 | 2013 |
| CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates ZY He, CM Campbell, MB Lassise, ZY Lin, JJ Becker, Y Zhao, M Boccard, ... Applied Physics Letters 109 (12), 2016 | 13 | 2016 |
| An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography XM Shen, ZY He, S Liu, ZY Lin, YH Zhang, DJ Smith, MR McCartney Applied Physics Letters 107 (12), 2015 | 9 | 2015 |
| Monolithically integrated CdTe/InSb visible/midwave-infrared two-color photodetectors ZY He, CM Campbell, MB Lassise, ZY Lin, JJ Becker, YH Zhang Infrared Physics & Technology 97, 58-62, 2019 | 7 | 2019 |
| 1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications CM Campbell, Y Zhao, E Suarez, M Boccard, XH Zhao, ZY He, ... 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 0411-0414, 2016 | 6 | 2016 |
| InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures OO Cellek, ZY He, ZY Lin, HS Kim, S Liu, YH Zhang Quantum Sensing and Nanophotonic Devices X 8631, 277-283, 2013 | 6 | 2013 |
| Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer W Yang, C Allen, JJ Li, H Cotal, C Fetzer, S Liu, D Ding, S Farrell, Z He, ... 2012 38th IEEE Photovoltaic Specialists Conference, 000978-000981, 2012 | 6 | 2012 |
| Modeling gain mechanisms in amorphous silicon due to efficient carrier multiplication and trap-induced junction modulation IA Niaz, MAR Miah, L Yan, Y Yu, ZY He, Y Zhang, AC Zhang, J Zhou, ... Journal of Lightwave Technology 37 (19), 5056-5066, 2019 | 5 | 2019 |
| InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications OO Cellek, H Li, XM Shen, Z Lin, EH Steenbergen, D Ding, S Liu, ... Infrared Technology and Applications XXXVIII 8353, 1173-1178, 2012 | 5 | 2012 |
| Diffusion characterization using electron beam induced current and time-resolved photoluminescence of InAs/InAsSb type-II superlattices D Zuo, R Liu, J Mabon, ZY He, S Liu, YH Zhang, EA Kadlec, B Olson, ... CLEO: Science and Innovations, SM2G. 4, 2015 | 3 | 2015 |
| Low-voltage charge-coupled devices with a heterostructure charge-storage well Z He, YH Zhang US Patent 10,153,324, 2018 | | 2018 |
| MWIR and visible nBn photodetectors and their monolithically-integration for two-color photodetector applications Z He Arizona State University, 2016 | | 2016 |
| Determination of Heterointerface Band Alignments in nBn Photodetectors Using Off-Axis Electron Holography XM Shen, ZY He, S Liu, YH Zhang, D Smith, M McCartney Bulletin of the American Physical Society 60, 2015 | | 2015 |
