| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016 | 247 | 2016 |
| Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis Applied physics letters 95 (13), 2009 | 231 | 2009 |
| Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 2014 | 230 | 2014 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 202 | 2017 |
| Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... ACS Photonics 6 (11), 2807-2815, 2019 | 198 | 2019 |
| Electrically injected GeSn lasers on Si operating up to 100 K SQY Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Huong Tran, Grey Abernathy ... Optica 7 (8), 924-928, 2020 | 197 | 2020 |
| Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016 | 150 | 2016 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 148 | 2016 |
| Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 5640, 2018 | 145 | 2018 |
| Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ... Acs Photonics 6 (6), 1434-1441, 2019 | 138 | 2019 |
| Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ... Applied Physics Letters 118 (11), 2021 | 134 | 2021 |
| Group IV photonics: driving integrated optoelectronics R Soref, D Buca, SQ Yu optics and photonics news 27 (1), 32-39, 2016 | 125 | 2016 |
| Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 2014 | 104 | 2014 |
| Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ... ECS Transactions 64 (6), 711, 2014 | 100 | 2014 |
| Competition of optical transitions between direct and indirect bandgaps in Ge1− xSnx W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ... Applied Physics Letters 105 (5), 2014 | 99 | 2014 |
| Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ... Optics express 22 (13), 15639-15652, 2014 | 99 | 2014 |
| Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ... Journal of Applied Physics 120 (2), 2016 | 93 | 2016 |
| Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ... Applied Physics Letters 105 (22), 2014 | 90 | 2014 |
| Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator pn junction Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ... AIP Advances 3 (7), 2013 | 90 | 2013 |
| Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ... Journal of electronic materials 43, 938-946, 2014 | 87 | 2014 |
Wei DuAssociate Professor, Department of Electrical Engineering, University of ArkansasVerified email at uark.edu
