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Bruno Baert
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Citované v
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High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ...
ACS applied materials & interfaces 7 (1), 62-67, 2015
602015
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, ND Nguyen
Solid-State Electronics 110, 65-70, 2015
102015
Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
B Baert, M Schmeits, ND Nguyen
Applied surface science 291, 25-30, 2014
102014
Impact of electron trap states on the transport properties of GeSn semiconducting heterostructures assessed by electrical characterizations
B Baert
ULiège-Université de Liège, 2016
22016
Impedance Spectroscopy of GeSn-based Heterostructures
B Baert, O Nakatsuka, S Zaima, ND Nguyen
ECS Transactions 50 (9), 481, 2013
22013
Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method
B Baert, O Nakatsuka, S Zaima, ND Nguyen
ECS Meeting Abstracts, 3158, 2012
12012
Current transients in reverse-biased p-GeSn/n-Ge diodes
B Baert, S Gupta, F Gencarelli, Y Shimura, R Loo, E Simoen, ND Nguyen
2015
Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes
B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, D Nguyen
2015
Reverse current transient behavior of pGeSn/nGe diodes
B Baert, S Gupta, F Gencarelli, Y Shimura, R Loo, E Simoen, ND Nguyen
The 9th International Conference on Silicon Epitaxy and Heterostructures …, 2015
2015
Electrical modelling of interface traps in GeSn MOS structures
B Baert, D Cerica, M Schmeits, ND Nguyen
JSPS International Core-to-Core Program Workshop on Atomically Controlled …, 2014
2014
Impact of traps on the electrical characteristics of GeSn/Ge diodes
B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, ND Nguyen
E-MRS 2014 Fall Meeting-Symposium J, 2014
2014
Electrical characterization of pGeSn/nGe diodes
B Baert, S Gupta, F Gencarelli, R Loo, E Simoen, ND Nguyen
2014 7th International Silicon-Germanium Technology and Device Meeting …, 2014
2014
Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers
S Gupta, E Simoen, T Asano, O Nakatsuka, F Gencarelli, Y Shimura, ...
The 8th International Conference on Silicon Epitaxy and Heterostructures …, 2013
2013
Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
B Baert, M Schmeits, ND Nguyen
European Materials Research Society (E-MRS) 2013 Spring Meeting, 2013
2013
Electrical Characterization of P-Ge1-xSnx/P-Ge and P-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy
B Baert, DYN Truong, O Nakatsuka, S Zaima, ND Nguyen
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012
2012
Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures
B Baert, ND Nguyen
" Jaszowiec" International School and Conference on the Physics of …, 2012
2012
New method for photovoltaic solar cell physical parameters extraction
S AAZOU, A Ibral, EM ASSAID, B BAERT, ND NGUYEN
CIEREE'2011, 18, 2011
2011
New search
B Baert, M Schmeits, ND Nguyen
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–18