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Angeline Klemm Smith
Angeline Klemm Smith
Verified email at umn.edu - Homepage
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Cited by
Cited by
Year
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
1492018
Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy
Z Zhao, M Jamali, AK Smith, JP Wang
Applied Physics Letters 106 (13), 2015
1332015
2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications
JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ...
2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019
1042019
Fast magnetoelectric device based on current-driven domain wall propagation
JP Wang, M Jamali, SS Sapatnekar, MG Mankalale, Z Liang, AK Smith, ...
US Patent 10,217,522, 2019
632019
External‐field‐free spin Hall switching of perpendicular magnetic nanopillar with a dipole‐coupled composite structure
Z Zhao, AK Smith, M Jamali, JP Wang
Advanced Electronic Materials 6 (5), 1901368, 2020
582020
Precessional magnetization induced spin current from CoFeB into Ta
M Jamali, A Klemm, JP Wang
Applied Physics Letters 103 (25), 2013
342013
Probing dipole coupled nanomagnets using magnetoresistance read
A Lyle, A Klemm, J Harms, Y Zhang, H Zhao, JP Wang
Applied Physics Letters 98 (9), 2011
332011
CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist
N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
232020
Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model
J Kim, H Zhao, Y Jiang, A Klemm, JP Wang, CH Kim
72nd Device Research Conference, 155-156, 2014
222014
Spin transfer torque programming dipole coupled nanomagnet arrays
A Lyle, J Harms, T Klein, A Lentsch, D Martens, A Klemm, JP Wang
Applied Physics Letters 100 (1), 2012
222012
Integration of spintronic interface for nanomagnetic arrays
A Lyle, J Harms, T Klein, A Lentsch, A Klemm, D Martens, JP Wang
AIP Advances 1 (4), 2011
182011
Planar Hall effect based characterization of spin orbital torques in Ta/CoFeB/MgO structures
M Jamali, Z Zhao, M DC, D Zhang, H Li, AK Smith, JP Wang
Journal of Applied Physics 119 (13), 2016
152016
Nonreciprocal behavior of the spin pumping in ultra-thin film of CoFeB
M Jamali, AK Smith, JP Wang
Journal of Applied Physics 119 (13), 2016
132016
A fast magnetoelectric device based on current-driven domain wall propagation
MG Mankalale, Z Liang, AK Smith, DC Mahendra, M Jamali, JP Wang, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
112016
External field free spin Hall effect device for perpendicular magnetization reversal using a composite structure with biasing layer
AK Smith, M Jamali, Z Zhao, JP Wang
arXiv preprint arXiv:1603.09624, 2016
112016
Spin transfer torque random access memory
JP Wang, M Jamali, A Klemm, H Meng
Emerging Nanoelectronic Devices, 56-77, 2014
112014
Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory
T Gosavi, S Manipatruni, CC Lin, K Oguz, C Wiegand, A Smith, N Sato, ...
US Patent 11,374,164, 2022
102022
Magnetic tunnel junction based integrated logics and computational circuits
JP Wang, M Jamaliz, AK Smith, Z Zhao
Nanomagnetic and Spintronic Devices for Energy‐Efficient Memory and …, 2016
92016
Spin orbit torque memory devices and methods of fabrication
K O'brien, C Wiegand, T Rahman, N Sato, G Allen, J Pellegren, A Smith, ...
US Patent 11,276,730, 2022
82022
Spin orbit torque memory devices and methods of fabrication
T Rahman, J Pellegren, A Smith, C Wiegand, N Sato, T Gosavi, ...
US Patent 11,062,752, 2021
82021
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