Thierry Conard
Thierry Conard
Overená e-mailová adresa na:
Citované v
Citované v
Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers
ML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ...
Journal of Applied Physics 92 (12), 7168-7174, 2002
Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide
A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ...
Applied physics letters 91 (8), 2007
Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
LÅ Ragnarsson, Z Li, J Tseng, T Schram, E Rohr, MJ Cho, T Kauerauf, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
H Nohira, W Tsai, W Besling, E Young, J Pétry, T Conard, W Vandervorst, ...
Journal of non-crystalline solids 303 (1), 83-87, 2002
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
RL Puurunen, W Vandervorst, WFA Besling, O Richard, H Bender, ...
Journal of applied physics 96 (9), 4878-4889, 2004
Organic and perovskite solar cells for space applications
I Cardinaletti, T Vangerven, S Nagels, R Cornelissen, D Schreurs, J Hruby, ...
Solar Energy Materials and Solar Cells 182, 121-127, 2018
PET/MRI in head and neck cancer: initial experience
I Platzek, B Beuthien-Baumann, M Schneider, V Gudziol, J Langner, ...
European journal of nuclear medicine and molecular imaging 40, 6-11, 2013
Passivation of Ge (100)∕ GeO2∕ high-κ gate stacks using thermal oxide treatments
F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ...
Journal of the Electrochemical Society 155 (2), G33, 2007
Deposition of HfO2 on germanium and the impact of surface pretreatments
S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ...
Applied physics letters 85 (17), 3824-3826, 2004
Atomic layer deposition of hafnium oxide on germanium substrates
A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ...
Journal of applied physics 97 (6), 2005
Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties
WFA Besling, E Young, T Conard, C Zhao, R Carter, W Vandervorst, ...
Journal of Non-Crystalline Solids 303 (1), 123-133, 2002
Characterization of Cu surface cleaning by hydrogen plasma
MR Baklanov, DG Shamiryan, Z Tökei, GP Beyer, T Conard, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
A study of the influence of typical wet chemical treatments on the germanium wafer surface
B Onsia, T Conard, S De Gendt, M Heyns, I Hoflijk, P Mertens, M Meuris, ...
Solid State Phenom. 103, 19-22, 2005
Dielectric properties of dysprosium-and scandium-doped hafnium dioxide thin films
C Adelmann, V Sriramkumar, S Van Elshocht, P Lehnen, T Conard, ...
Applied Physics Letters 91 (16), 2007
Interface engineering for Ge metal-oxide–semiconductor devices
A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515 (16), 6337-6343, 2007
Low temperature deposition of 2D WS 2 layers from WF 6 and H 2 S precursors: impact of reducing agents
A Delabie, M Caymax, B Groven, M Heyne, K Haesevoets, J Meersschaut, ...
Chemical Communications 51 (86), 15692-15695, 2015
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ...
Chemistry of Materials 29 (7), 2927-2938, 2017
HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
M Caymax, S Van Elshocht, M Houssa, A Delabie, T Conard, M Meuris, ...
Materials Science and Engineering: B 135 (3), 256-260, 2006
Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices
S Van Elshocht, M Caymax, T Conard, S De Gendt, I Hoflijk, M Houssa, ...
Applied physics letters 88 (14), 2006
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Články 1–20