Follow
Chris Wiegand
Chris Wiegand
Verified email at intel.com
Title
Cited by
Cited by
Year
45nm high-k+ metal gate strain-enhanced transistors
C Auth, A Cappellani, JS Chun, A Dalis, A Davis, T Ghani, G Glass, ...
2008 Symposium on VLSI Technology, 128-129, 2008
6042008
Mechanical properties of Al2O3/polymethylmethacrylate nanocomposites
BJ Ash, DF Rogers, CJ Wiegand, LS Schadler, RW Siegel, ...
Polymer Composites 23 (6), 1014-1025, 2002
2762002
Intrinsic transistor reliability improvements from 22nm tri-gate technology
S Ramey, A Ashutosh, C Auth, J Clifford, M Hattendorf, J Hicks, R James, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 4C. 5.1-4C. 5.5, 2013
2052013
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
1562018
BTI reliability of 45 nm high-K+ metal-gate process technology
S Pae, M Agostinelli, M Brazier, R Chau, G Dewey, T Ghani, M Hattendorf, ...
2008 IEEE International Reliability Physics Symposium, 352-357, 2008
1552008
13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique
L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019
1422019
2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications
JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ...
2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019
1082019
Integrated circuits with selective gate electrode recess
S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf
US Patent 8,896,030, 2014
1042014
Non-volatile RRAM embedded into 22FFL FinFET technology
O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ...
2019 Symposium on VLSI Technology, T230-T231, 2019
732019
Inductively coupled hydrogen plasma-assisted Cu ALD on metallic and dielectric surfaces
C Jezewski, WA Lanford, CJ Wiegand, JP Singh, PI Wang, JJ Senkevich, ...
Journal of the Electrochemical Society 152 (2), C60, 2005
652005
Metal Chemical Vapor Deposition Approaches for Fabricating Wrap-Around Contacts and Resulting Structures
DB Bergstrom, CJ Wiegand
US Patent 11,063,151, 2021
562021
Synthesis and characterization of the new fluoropolymer poly (difluorosilylenemethylene); an analogue of poly (vinylidene fluoride)
M Lienhard, I Rushkin, G Verdecia, C Wiegand, T Apple, LV Interrante
Journal of the American Chemical Society 119 (49), 12020-12021, 1997
401997
Molecular caulking: a pore sealing CVD polymer for ultralow k dielectrics
C Jezewski, CJ Wiegand, D Ye, A Mallikarjunan, D Liu, C Jin, WA Lanford, ...
Journal of the Electrochemical Society 151 (7), F157, 2004
322004
Dielectric breakdown in a 45 nm high-k/metal gate process technology
C Prasad, M Agostinelli, C Auth, M Brazier, R Chau, G Dewey, T Ghani, ...
2008 IEEE International Reliability Physics Symposium, 667-668, 2008
292008
CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist
N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
282020
Selective Deposition of Ultrathin Poly(p‐xylene) Films on Dielectrics Versus Copper Surfaces
JJ Senkevich, CJ Wiegand, GR Yang, TM Lu
Chemical Vapor Deposition 10 (5), 247-249, 2004
252004
Spin orbit torque (SOT) memory devices and their methods of fabrication
N Sato, A Smith, T Gosavi, S Manipatruni, K Oguz, K O'brien, T Rahman, ...
US Patent 11,367,749, 2022
192022
Stacked transistor bit-cell for magnetic random access memory
S Manipatruni, C Wiegand, T Gosavi, I Young
US Patent 11,411,047, 2022
182022
Methods of forming a magnetic random access memory etch spacer and structures formed thereby
D Lamborn, O Golonzka, C Wiegand
US Patent 9,318,694, 2016
182016
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
T Gosavi, S Manipatruni, K Oguz, N Sato, K O'brien, B Buford, C Wiegand, ...
US Patent 11,476,412, 2022
172022
The system can't perform the operation now. Try again later.
Articles 1–20