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| Mechanical properties of Al2O3/polymethylmethacrylate nanocomposites BJ Ash, DF Rogers, CJ Wiegand, LS Schadler, RW Siegel, ... Polymer Composites 23 (6), 1014-1025, 2002 | 274 | 2002 |
| Intrinsic transistor reliability improvements from 22nm tri-gate technology S Ramey, A Ashutosh, C Auth, J Clifford, M Hattendorf, J Hicks, R James, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 4C. 5.1-4C. 5.5, 2013 | 203 | 2013 |
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| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 149 | 2018 |
| 13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019 | 132 | 2019 |
| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 105 | 2019 |
| Integrated circuits with selective gate electrode recess S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf US Patent 8,896,030, 2014 | 98 | 2014 |
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| Inductively coupled hydrogen plasma-assisted Cu ALD on metallic and dielectric surfaces C Jezewski, WA Lanford, CJ Wiegand, JP Singh, PI Wang, JJ Senkevich, ... Journal of the Electrochemical Society 152 (2), C60, 2005 | 65 | 2005 |
| Metal Chemical Vapor Deposition Approaches for Fabricating Wrap-Around Contacts and Resulting Structures DB Bergstrom, CJ Wiegand US Patent 11,063,151, 2021 | 54 | 2021 |
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| Molecular caulking: a pore sealing CVD polymer for ultralow k dielectrics C Jezewski, CJ Wiegand, D Ye, A Mallikarjunan, D Liu, C Jin, WA Lanford, ... Journal of the Electrochemical Society 151 (7), F157, 2004 | 32 | 2004 |
| Dielectric breakdown in a 45 nm high-k/metal gate process technology C Prasad, M Agostinelli, C Auth, M Brazier, R Chau, G Dewey, T Ghani, ... 2008 IEEE International Reliability Physics Symposium, 667-668, 2008 | 27 | 2008 |
| Selective Deposition of Ultrathin Poly(p‐xylene) Films on Dielectrics Versus Copper Surfaces JJ Senkevich, CJ Wiegand, GR Yang, TM Lu Chemical Vapor Deposition 10 (5), 247-249, 2004 | 25 | 2004 |
| CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 23 | 2020 |
| Spin orbit torque (SOT) memory devices and their methods of fabrication N Sato, A Smith, T Gosavi, S Manipatruni, K Oguz, K O'brien, T Rahman, ... US Patent 11,367,749, 2022 | 18 | 2022 |
| Methods of forming a magnetic random access memory etch spacer and structures formed thereby D Lamborn, O Golonzka, C Wiegand US Patent 9,318,694, 2016 | 18 | 2016 |
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| Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory T Gosavi, S Manipatruni, K Oguz, N Sato, K O'brien, B Buford, C Wiegand, ... US Patent 11,476,412, 2022 | 16 | 2022 |
Kaan OguzSenior Research Engineer, Components Research, IntelVerified email at tcd.ie
